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quality MCC MCG50N03 TP N Channel MOSFET with Excellent Heat Dissipation and RoHS Compliant Lead Free Package factory
quality MCC MCG50N03 TP N Channel MOSFET with Excellent Heat Dissipation and RoHS Compliant Lead Free Package factory

MCC MCG50N03 TP N Channel MOSFET with Excellent Heat Dissipation and RoHS Compliant Lead Free Package

Key Attributes
Model Number: MCG50N03-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
4.9mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
252pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.15nF@15V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
52.8nC@10V
Mfr. Part #:
MCG50N03-TP
Package:
DFN3333
Product Description

Product Overview

The MCG50N03 is an N-CHANNEL MOSFET featuring Trench Power LV MOSFET Technology. It offers an excellent package for heat dissipation and a high-density cell design for low RDS(on). This MOSFET is designed for applications requiring high efficiency and reliability, with its epoxy meeting UL 94 V-0 flammability rating and being Moisture Sensitivity Level 1 compliant. It is available as Lead Free Finish/RoHS Compliant, with a Halogen Free option available upon request by adding the "-HF" suffix.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Technology: Trench Power LV MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes (indicated by "P" suffix)
  • Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Operating Junction Temperature Range -55 +175 C
Storage Temperature Range -55 +175 C
Thermal Resistance Junction to Case RJC 5 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.5 2.5 V
Continuous Drain Current ID TC=25C 35 A
Continuous Drain Current ID TC=100C 225 A
Pulsed Drain Current IDM (Note 2) 190 A
Total Power Dissipation PD TC=25C 30 W
Total Power Dissipation PD TC=100C 15 W
Single Pulse Avalanche Energy EAS (Note 3) 50 mJ
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 4.9 6 V
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=15A 6.3 8 V
Diode Forward Voltage VSD VGS=0V, IS=20A 1.2 V
Continuous Body Diode Current IS 50 A
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 2150 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 435 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 252 pF
Total Gate Charge Qg VGS=10V, VDD=20V, ID=4A, RL=1 52.8 nC
Gate-Source Charge Qgs VGS=10V, VDD=20V, ID=4A, RL=1 12.3 nC
Gate-Drain Charge Qg VGS=10V, VDD=20V, ID=4A, RL=1 10.8 nC
Turn-On Delay Time td(on) RGEN=3 9 ns
Turn-On Rise Time tr RGEN=3 15.5 ns
Turn-Off Delay Time td(off) RGEN=3 29 ns
Turn-Off Fall Time tf RGEN=3 9 ns
Gate-Source Leakage Current IGSS VDS=15V,VGS=10V,ID=20A 28 nC
Zero Gate Voltage Drain Current IDSS IF=25A, di/dt=100A/s 27 ns
DIM INCHES MM NOTE
A 0.126 - 0.130 3.20 - 3.30
B 0.126 - 0.130 3.20 - 3.30
C 0.030 - 0.033 0.75 - 0.85
C1 0.007 - 0.009 0.18 - 0.22
C2 --- - 0.002 --- - 0.05
D 0.071 - 0.079 1.80 - 2.00
E 0.087 - 0.098 2.20 - 2.50
F 0.010 - 0.014 0.25 - 0.35
G 0.012 - 0.016 0.30 - 0.40
H 0.016 - 0.020 0.40 - 0.50
e 0.024 - 0.028 0.60 - 0.70

Ordering Information:

Device Packing Part Number
MCG50N03 Tape&Reel: 5Kpcs/Reel -TP

Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF


2008182104_MCC-MCG50N03-TP_C725261.pdf

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