Power MOSFET MASPOWER MS15N90ICT1 900V 15A Suitable for Switch Mode Power Supplies and UPS Systems
Key Attributes
Model Number:
MS15N90ICT1
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
450mΩ@15V
Gate Threshold Voltage (Vgs(th)):
4.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Input Capacitance(Ciss):
1.7nF
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
67.9W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
MS15N90ICT1
Package:
TO-220F
Product Description
Product Overview
The MS15N90ICT1 is a high-efficiency power MOSFET from Maspower, designed for demanding applications. It features a VDS of 900V and ID of 15A, with low Crss, low gate charge, and improved dv/dt capability. This makes it ideal for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and UPS systems.
Product Attributes
- Brand: Maspower
- Model: MS15N90ICT1
- Version: H1.01
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 900 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Drain Current-continuous | ID | TC=25 | 15 | A | ||
| Drain Current-continuous | ID | TC=100 | 10 | A | ||
| Drain Current-pulse | IDM | (1) | 60 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Tj=25,IAS=12A,VDD=50V,VGS=10) | 720 | mJ | ||
| Maximum Power Dissipation | PD | 67.9 | W | |||
| Linear Derating Factor | 0.54 | W/ | ||||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | ~ | +150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A,VGS=0V | 900 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=25 | - | - | 1 | μA |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=125 | - | - | 100 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2.8 | 3.6 | 4.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=15V,ID=10A | - | 0.37 | 0.45 | Ω |
| Forward Transconductance | gfs | VDS=40V,ID=10A | - | 8.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 1700 | - | pF |
| Output capacitance | Coss | - | 310 | - | pF | |
| Reverse transfer capacitance | Crss | - | 30 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=450V,ID=15A, VGS=10V,RG=25Ω | - | 34 | - | ns |
| Turn-On rise time | tr | - | 36 | - | ns | |
| Turn-Off delay time | td(Off) | - | 120 | - | ns | |
| Turn-Off rise time | tf | - | 32 | - | ns | |
| Total Gate Charge | Qg | VDS=450V,ID=15A, VGS=10V | - | 28 | - | nC |
| Gate-Source charge | Qgs | - | 9 | - | nC | |
| Gate-Drain charge | Qg | - | 10 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Curret | VSD | VGS=0V,IS=1A | - | 0.72 | 1.2 | V |
| Diode Forward Current | IS | - | - | 15 | A | |
| Reverse recovery time | Trr | IS=15A,diF/dt=100A/μs VR=100V,VGS=0V | - | 335 | - | ns |
| Reverse recovery charge | Qrr | - | 2437 | - | nC | |
| Reverse recovery current | Irr | - | 12.5 | - | A | |
| Thermal Characteristic | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 1.84 | /W | |||
| Thermal Resistance,junction to Ambient | Rth(j-A) | 62.5 | /W | |||
2501151750_MASPOWER-MS15N90ICT1_C42445163.pdf
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