Single N Channel MOSFET with Gate ESD Protection LRC LNTR4003NLT1G Featuring Low Gate Voltage Threshold
Key Attributes
Model Number:
LNTR4003NLT1G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
560mA
RDS(on):
2Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.1pF@5V
Number:
1 N-channel
Input Capacitance(Ciss):
41pF@5V
Pd - Power Dissipation:
690mW
Gate Charge(Qg):
-
Mfr. Part #:
LNTR4003NLT1G
Package:
SOT-23
Product Description
Product Overview
The LNTR4003NLT1G and S-LNTR4003NLT1G are N-Channel, single MOSFETs with Gate ESD protection, designed for various switching applications. They offer a low gate voltage threshold for simplified drive circuit design and low gate charge for fast switching. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. These devices are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification (S-prefix): AEC-Q101
- PPAP Capability (S-prefix): Yes
- Package: SOT-23 (TO-236)
Technical Specifications
| Parameter | Symbol | Limits (Ta = 25C) | Unit | Limits (Ta = 85C) | Unit | |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | 30 | V | - | - | |
| GatetoSource Voltage | VGS | 20 | V | - | - | |
| Continuous Drain Current (Note 1) Steady State | ID | 0.56 | A | 0.37 | A | |
| Pulsed Drain Current (tp=10s) | IDM | 1.7 | A | - | - | |
| Continuous Source Current (Body Diode) | IS | 0.56 | A | 0.4 | A | |
| Maximum Power Dissipation (Note 1) Steady State | PD | 1 | W | 0.69 | W | |
| Junction and Storage temperature | TJ,Tstg | 55+150 | C | |||
| Maximum Temperature for Soldering Purposes | TL | 260 | C | |||
| DrainSource Breakdown Voltage (VGS = 0, ID = 100Adc) | V(BR)DSS | 30 | Vdc | - | - | |
| DrainSource Breakdown Voltage Temperature Coefficient | V(BR)DSS/ TJ | - | mV/C | 40 | mV/C | |
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | - | Adc | 1.0 | Adc | |
| GateBody Leakage Current, Forward (VDS = 0 V, VGS = 10 V) | IGSS | - | Adc | 1.0 | Adc | |
| Gate Threshold Voltage (VDS = VGS, ID = 250Adc) | VGS(th) | - | V | 1.5 | V | |
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | - | mV/C | - | - | |
| Static DrainSource OnState Resistance (VGS = 4.0 V, ID = 10 mA) | RDS(on) | - | 0.8 | |||
| Static DrainSource OnState Resistance (VGS = 2.5 V, ID = 10 mA) | RDS(on) | - | 1.6 | |||
| Forward Transconductance (VDS = 3.0 V, ID = 10 mA) | gfs | - | S | 0.33 | S | |
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 5 V) | Ciss | - | pF | 41 | pF | |
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 5 V) | Coss | - | pF | 12 | pF | |
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 5 V) | Crss | - | pF | 8.1 | pF | |
| Turn-On Delay Time | td(on) | - | ns | - | - | |
| Rise Time | tr | - | ns | - | - | |
| Turn-Off Delay Time | td(off) | - | ns | - | - | |
| Fall Time | tf | - | ns | - | - | |
| Forward Voltage (VGS = 0 Vdc, ISD = 10 mAdc) | VSD | - | Vdc | 0.65 | Vdc | |
| Reverse Recovery Time (VGS = 0 V,dIS/dt = 8A/s,IS = 10 mA ) | trr | - | ns | 14 | ns | |
| Thermal Resistance, JunctiontoAmbient Steady State (Note 1) | RJA | 180 | C/W | 150 | C/W | |
| Device | Marking | Shipping | Quantity |
|---|---|---|---|
| LNTR4003NLT1G | TR8 | Tape&Reel | 3000 |
| S-LNTR4003NLT1G | TR8 | Tape&Reel | 10000 |
| LNTR4003NLT3G | TR8 | Tape&Reel | 10000 |
Applications
- Level shifters
- Level switches
- Low side load switches
- Portable applications
2410010101_LRC-LNTR4003NLT1G_C2912039.pdf
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