ME7423S G P Channel Logic Enhancement Mode Power Field Effect Transistor with DMOS Trench Technology
Key Attributes
Model Number:
ME7423S-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
-
Output Capacitance(Coss):
400pF
Input Capacitance(Ciss):
3.02nF
Pd - Power Dissipation:
3.8W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
ME7423S-G
Package:
DFN-8-EP(3.3x3.3)
Product Description
Product Overview
The ME7423 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: ME (implied from product name)
- Product Type: P-Channel Enhancement Mosfet
- Model: ME7423S-G
- Certifications: Green product-Halogen free
- Package: DFN 3.3x3.3
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDSS | Drain-Source Voltage | -30 | V | ||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TA=25 | -17 | A | ||
| TA=70 | -13 | A | ||||
| IDM | Pulsed Drain Current | -68 | A | |||
| Maximum Power Dissipation | PD | TA=25 | 3.8 | W | ||
| TA=70 | 2.4 | W | ||||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance | RθJA | Junction to Ambient | 33 | /W | ||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250μA) | -30 | V | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250μA) | -1 | -3 | V | ||
| IGSS | Gate Leakage Current (VDS=0V, VGS=±20V) | ±100 | nA | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | 1 | μA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-11.7A | 10 | 13 | mΩ | |
| VGS=-4.5V, ID=-9A | 13 | 17 | mΩ | |||
| Diode Forward Voltage | VSD | IS=-9A, VGS=0V | 0.8 | 1.2 | V | |
| Dynamic Characteristics | Qg | Total Gate Charge (-10V) | 70 | nC | ||
| Total Gate Charge (-4.5V) | 35 | nC | ||||
| Qgs | Gate-Source Charge | 13 | nC | |||
| Qgd | Gate-Drain Charge | 17 | nC | |||
| Capacitance | Ciss | Input Capacitance | 3020 | pF | ||
| Coss | Output Capacitance | 400 | pF | |||
| Crss | Reverse Transfer Capacitance | 135 | pF | |||
| Switching Characteristics | td(on) | Turn-On Delay Time | 47 | ns | ||
| tr | Turn-On Rise Time | 20 | ns | |||
| td(off) | Turn-Off Delay Time | 212 | ns | |||
| tf | Turn-Off Fall Time | 61 | ns |
2410121637_MATSUKI-ME7423S-G_C2841473.pdf
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