P Channel Enhancement Mode MOSFET LRC LP3407LT1G 30V Low RDS ON Ideal for Load Switch and PWM Applications
Key Attributes
Model Number:
LP3407LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
90pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
625pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
LP3407LT1G
Package:
SOT-23
Product Description
Product Overview
The LP3407LT1G is a 30V P-Channel Enhancement-Mode MOSFET manufactured by LESHAN RADIO COMPANY, LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for load switch and PWM applications. This device is available in the SOT23 (TO236AB) package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT23 (TO236AB)
- Technology: Advanced Trench
- Mode: P-Channel Enhancement-Mode
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S-LP3407LT1G)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Continuous Drain Current | ID | TA=25°C | -4.1 | A | ||
| Continuous Drain Current | ID | TA=70°C | -3.5 | A | ||
| Pulsed Drain Current | IDM | t ≤ 10s | -25 | A | ||
| Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Power Dissipation | PD | TA=70°C | 0.9 | W | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Lead | RθJL | 63 | °C/W | |||
| Maximum Junction-to-Ambient | RθJA | TA=25°C | 70 | °C/W | ||
| Maximum Junction-to-Ambient | RθJA | TA=70°C | 100 | °C/W | ||
| Maximum Junction-to-Ambient | RθJA | Steady-State | 125 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250µA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | 1.0E-05 | 1.0E-04 | µA | |
| Zero Gate Voltage Drain Current | IDSS | TJ=55°C | 1.0E-03 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=125°C | 1.0E-02 | µA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=ID=-250µA | -1 | -2 | -3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-4.1A | 70 | 100 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | 95 | 100 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 10 | S | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.7 | -1 | V | |
| Maximum Body-Diode Continuous Current | IS | VGS=0V | -2 | A | ||
| Maximum Body-Diode Continuous Current | IS | VGS=0V, TA=70°C | -1.4 | A | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 415 | 625 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=-15V, f=1MHz | 70 | 130 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, f=1MHz | 40 | 90 | pF | |
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 3.5 | 11.5 | Ω | |
| Total Gate Charge | Qg(10V) | VDS=-15V, ID=-4A | 7.4 | 11 | nC | |
| Total Gate Charge | Qg(4.5V) | VDS=-15V, ID=-4A | 3.7 | 6 | nC | |
| Gate Source Charge | Qgs | VDS=-15V, ID=-4A | 1.3 | 1.9 | nC | |
| Gate Drain Charge | Qgd | VDS=-15V, ID=-4A | 1.3 | 3.1 | nC | |
| Turn-On DelayTime | tD(on) | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω | 7.5 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω | 5.5 | ns | ||
| Turn-Off DelayTime | tD(off) | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω | 19 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω | 7 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/µs | 8.8 | 13 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=100A/µs | 4 | 6.4 | nC | |
| Ordering Information | ||||||
| Device | Marking | Shipping | ||||
| LP3407LT1G | A07 | 3000/Tape&Reel | ||||
| LP3407LT3G | A07 | 10000/Tape&Reel | ||||
1810061630_LRC-LP3407LT1G_C49583.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
