Powerful MagnaChip Semicon MDT10N023RH MOSFET Featuring Fast Switching for Battery Management Systems
Key Attributes
Model Number:
MDT10N023RH
Product Custom Attributes
Mfr. Part #:
MDT10N023RH
Package:
TOLL
Product Description
Product Overview
The MDT10N023RH is a single N-channel Trench MOSFET from Magnachip Power Technology, designed for high-performance applications. It features very low on-resistance and fast switching capabilities, making it ideal for motor inverter applications, battery management systems (BMS), DC/DC converters, and general industrial use, including high power drives for e-vehicles.
Product Attributes
- Brand: Magnachip
- Technology: Magnachip MOSFET Technology
- Certifications: Halogen Free, RoHS Status
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions / Note |
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | 100 | - | - | V | VGS=0 V, ID=250 A |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=20 V, VDS=0 V |
| Zero gate voltage drain current | IDSS | - | - | 1 | A | VDS=100 V, VGS=0 V |
| Gate threshold voltage | VGS(th) | 2.0 | 2.8 | 4.0 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(on) | - | 1.85 | 2.3 | m | VGS=10 V, ID=100 A |
| Transconductance | gfs | - | 130 | - | S | VDS=10 V, ID=100 A |
| Gate resistance | RG | - | 3.0 | - | f=1MHz | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | 12,536 | - | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Output capacitance | Coss | - | 1,367 | - | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Reverse transfer capacitance | Crss | - | 36 | - | pF | VGS=0 V, VDS=50 V, f=1 MHz |
| Gate charge total | Qg | - | 167 | - | nC | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Gate to source charge | Qgs | - | 49 | - | nC | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Gate to drain charge | Qgd | - | 33 | - | nC | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Gate plateau voltage | Vplateau | - | 4.6 | - | V | VDD=50 V, ID=100 A, VGS=0 to 10 V |
| Turn-on delay time | td(on) | - | 33 | - | ns | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Rise time | tr | - | 20 | - | ns | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Turn-off delay time | td(off) | - | 108 | - | ns | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Fall time | tf | - | 40 | - | ns | VDD=50 V, VGS=10 V, ID=100 A, RG,ext=3 |
| Diode Characteristics | ||||||
| Diode continous forward current | IS | - | - | 300 | A | pulsed; tp 10 s |
| Diode pulse current | IS,pulse | - | - | 1200 | A | - |
| Diode forward voltage | VSD | - | 0.9 | 1.2 | V | VGS=0 V, IF=100 A |
| Reverse recovery time | trr | - | 128 | - | ns | IF=100 A, diF/dt=100 A/s |
| Reverse recovery charge | Qrr | - | 422 | - | nC | IF=100 A, diF/dt=100 A/s |
| Thermal Characteristics | ||||||
| Thermal resistance, junction - case | RJC | - | 0.34 | - | K/W | Silicon Limited |
| Thermal resistance, junction - ambient | RJA | - | 40 | - | K/W | Surface mounted FR-4 board by JEDEC (jesd51-7) |
| Operating and storage temperature | Tj, Tstg | -55 | - | 175 | C | - |
| Avalanche energy, single pulse | EAS | - | 481 | - | mJ | IS=31A, VDD=50V, VGS=10V, L=1.0mH, starting Tj=25 |
| Total power dissipation | Ptot | - | 221 | 441 | W | Tc=100C / Tc=25C |
| Maximum Ratings | ||||||
| Drain-source Voltage | VDS | - | - | 100 | V | TA = 25C, unless otherwise specified |
| Gate-source Voltage | VGS | - | - | 20 | V | TA = 25C, unless otherwise specified |
| Drain current | ID | - | 300 | 302 | A | Tc=25C / Tc=25C |
| Pulsed drain current | IDM | - | - | 1200 | A | Tc=25C |
2512171458_MagnaChip-Semicon-MDT10N023RH_C5188727.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
