Single N Channel Trench MOSFET MagnaChip Semicon MDE10N026RH for DC DC Converters and E Bike Drives
Key Attributes
Model Number:
MDE10N026RH
Product Custom Attributes
Mfr. Part #:
MDE10N026RH
Package:
TO-263
Product Description
Product Overview
The MDE10N026RH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd., leveraging advanced MOSFET Technology for high performance. It offers excellent on-state resistance, fast switching, and superior quality, making it suitable for industrial applications such as Low Power Drives of E-bikes (E-Vehicles), DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Type: Single N-Channel Trench MOSFET
- Certifications: RoHS Status: Halogen Free
- Date: Jan. 2021
- Version: 1.3
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current (Silicon Limited) | ID | TC=25°C | 283 | A | ||
| Continuous Drain Current (Package Limited) | ID | TC=25°C | 120 | A | ||
| Continuous Drain Current (Silicon Limited) | ID | TC=100°C | 200 | A | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Power Dissipation (TC=25°C) | PD | 416 | W | |||
| Power Dissipation (TC=100°C) | PD | 208 | W | |||
| Single Pulse Avalanche Energy | EAS | 512 | mJ | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 40 | °C/W | |||
| Thermal Resistance, Junction-to-Case | RθJC | 0.36 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | - | 4.0 | V |
| Drain Cut-Off Current | IDSS | VDS = 100V, VGS = 0V | - | - | 1.0 | µA |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±0.1 | µA |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 50A | - | 2.3 | 2.6 | mΩ |
| Forward Transconductance | gfs | VDS = 10V, ID = 50A | - | 110 | - | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 50V, ID = 50A, VGS = 10V | - | 147 | - | nC |
| Gate-Source Charge | Qgs | - | 42 | - | ||
| Gate-Drain Charge | Qg d | - | 28 | - | ||
| Input Capacitance | Ciss | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 10420 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 36 | - | ||
| Output Capacitance | Coss | - | 2050 | - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0Ω | - | 33 | - | ns |
| Rise Time | tr | - | 20 | - | ||
| Turn-Off Delay Time | td(off) | - | 123 | - | ||
| Fall Time | tf | - | 45 | - | ||
| Gate Resistance | Rg | f=1 MHz | - | 3.0 | - | Ω |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 50A, dl/dt = 100A/μs | - | 98 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | - | 275 | - | nC | |
2512171458_MagnaChip-Semicon-MDE10N026RH_C40262882.pdf
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