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quality N Channel small signal MOSFET LRC LNTK2575LT1G featuring ESD protection and SOT 23 3 lead package factory
quality N Channel small signal MOSFET LRC LNTK2575LT1G featuring ESD protection and SOT 23 3 lead package factory

N Channel small signal MOSFET LRC LNTK2575LT1G featuring ESD protection and SOT 23 3 lead package

Key Attributes
Model Number: LNTK2575LT1G
Product Custom Attributes
Drain To Source Voltage:
25V
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
249mΩ@4.5V,0.6A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
12pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
60pF@10V
Pd - Power Dissipation:
280mW
Gate Charge(Qg):
1.5nC@4.5V
Mfr. Part #:
LNTK2575LT1G
Package:
SOT-23
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. LNTK2575LT1G is a single, N-Channel, small signal MOSFET with ESD protection, housed in a SOT-23 (3-Leads) package. It features advanced planar technology for fast switching and low RDS(on), contributing to higher efficiency and extended battery life. This device is suitable for applications such as boost and buck converters, load switches, and battery protection.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Code: T4
  • Package Type: SOT-23 (3-Leads)
  • Channel Type: N-Channel
  • Protection: ESD Protection
  • Technology: Advanced Planar Technology
  • Lead Free: Yes (Pb-Free Device)
  • Certifications (S-Prefix): AEC-Q101 Qualified and PPAP Capable (for S-LNTK2575LT1G)
  • Marking Diagram: T4 = Specific Device Code, M = Month Code

Technical Specifications

Specification Symbol Value Unit Test Condition
Drain-to-Source Voltage V(BR)DSS 25 V VGS = 0 V, ID = 250 A
Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 30 mV/C
Zero Gate Voltage Drain Current IDSS 0.5 A VGS = 0 V, VDS = 20 V, TJ = 25C
2.0 A VGS = 0 V, VDS = 20 V, TJ = 70C
5.0 A VGS = 0 V, VDS = 20 V, TJ = 125C
Gate-to-Source Leakage Current IGSS 3 A VDS = 0 V, VGS = 8.0 V
Gate Threshold Voltage VGS(TH) 0.5 - 1.5 V VGS = VDS, ID = 250 A
Negative Threshold Temperature Coefficient VGS(TH)/TJ -2.0 mV/C
Drain-to-Source On Resistance RDS(on) 249 - 350 m VGS = 4.5 V, ID = 0.6 A
299 - 400 m VGS = 2.7 V, ID = 0.2 A
260 m VGS = 4.5 V, ID = 1.2 A
Forward Transconductance gFS 0.5 S VDS = 5.0 V, ID = 0.5 A
Input Capacitance CISS 49 - 60 pF VGS = 0 V, f = 1.0 MHz, VDS = 10 V
Output Capacitance COSS 22.4 - 30 pF VGS = 0 V, f = 1.0 MHz, VDS = 10 V
Reverse Transfer Capacitance CRSS 8.0 - 12 pF VGS = 0 V, f = 1.0 MHz, VDS = 10 V
Total Gate Charge QG(TOT) 1.2 - 1.5 nC VGS = 4.5 V, VDS = 15 V, ID = 0.8 A
Threshold Gate Charge QG(TH) 0.2 nC VGS = 4.5 V, VDS = 15 V, ID = 0.8 A
Gate-to-Source Charge QGS 0.28 - 0.50 nC VGS = 4.5 V, VDS = 15 V, ID = 0.8 A
Gate-to-Drain Charge QGD 0.3 - 0.40 nC VGS = 4.5 V, VDS = 15 V, ID = 0.8 A
Turn-On Delay Time td(ON) 5.0 - 12 ns VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, RG = 51
Rise Time tr 8.2 - 8.0 ns VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, RG = 51
Turn-Off Delay Time td(OFF) 23 - 35 ns VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, RG = 51
Fall Time tf 41 - 60 ns VGS = 4.5 V, VDS = 15 V, ID = 0.7 A, RG = 51
Forward Diode Voltage VSD 0.82 - 1.20 V VGS = 0 V, IS = 0.6 A, TJ = 25C
Continuous Drain Current (Steady State) ID 0.7 A TA = 25C (Note 1)
0.6 A TA = 75C (Note 1)
Power Dissipation (Steady State) PD 0.28 W (Note 1)
Pulsed Drain Current IDM 3.0 A tp = 10 s
Operating Junction and Storage Temperature TJ, TSTG -55 to +150 C
Source Current (Body Diode) IS 0.3 A (Note 1)
Lead Temperature for Soldering TL 260 C (1/8 from case for 10 s)
ESD Rating (Machine Model) 250 V
Junction-to-Ambient Thermal Resistance (Steady State) RJA 450 C/W (Note 1)
Junction-to-Ambient Thermal Resistance (t 5 s) RJA 375 C/W (Note 1)

2010222107_LRC-LNTK2575LT1G_C883194.pdf

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