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quality Medium power switching transistor MDD Microdiode Semiconductor MMBT5551-E with SOT-23 package design factory
quality Medium power switching transistor MDD Microdiode Semiconductor MMBT5551-E with SOT-23 package design factory

Medium power switching transistor MDD Microdiode Semiconductor MMBT5551-E with SOT-23 package design

Key Attributes
Model Number: MMBT5551-E
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551-E
Package:
SOT-23
Product Description

MMBT5551-E Transistor

The MMBT5551-E is an NPN transistor designed for medium power amplification and switching applications. It offers ideal performance characteristics for these roles.

Product Attributes

  • Brand: Microdiode
  • Model: MMBT5551-E
  • Package: SOT-23
  • Complementary to: MMBT540

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 0.6 A
Collector Power Dissipation PC (Ta=25) 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V,IE=0 180 nA
Emitter cut-off current IEBO VEB=4V,IC=0 300 nA
DC current gain hFE(1) VCE=5V, IC=1mA 50
DC current gain hFE(2) VCE=5V, IC=10mA 50
DC current gain hFE(3) VCE=5V, IC=50mA 50
Collector-emitter saturation voltage VCE(sat)1 IC=10mA, IB=1mA 0.2 V
Collector-emitter saturation voltage VCE(sat)2 IC=50mA, IB=5mA 1.1 V
Base-emitter saturation voltage VBE(sat)1 IC=10mA, IB=1mA 0.75 V
Base-emitter saturation voltage VBE(sat)2 IC=50mA, IB=5mA 1.1 V
Transition frequency fT VCE=5V, IC=10mA,f=30MHz 300 MHz
Collector output capacitance Cob VCB=10V, IE=0,f=1MHz 6 pF

2411131351_MDD-Microdiode-Semiconductor-MMBT5551-E_C41371418.pdf

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