Single N Channel Trench MOSFET MagnaChip Semicon MDP15N075TH Suitable for E Vehicle Drives and Industrial
Key Attributes
Model Number:
MDP15N075TH
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
144A
RDS(on):
6.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.1V
Reverse Transfer Capacitance (Crss@Vds):
94pF
Input Capacitance(Ciss):
6.22nF
Pd - Power Dissipation:
312W
Output Capacitance(Coss):
2.22nF
Gate Charge(Qg):
91nC@10V
Mfr. Part #:
MDP15N075TH
Package:
TO-220
Product Description
Product Overview
The MDP15N075TH is a Single N-Channel Trench MOSFET from Magnachip Semiconductor, utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance, fast switching capabilities, and superior quality. This MOSFET is suitable for industrial applications including Low Power Drives of E-bikes (E-Vehicles), DC/DC converters, and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Type: Single N-Channel Trench MOSFET
- Model: MDP15N075TH
- RoHS Status: Halogen Free
- Package: TO-220
- Certifications: 100% UIL Tested, 100% Rg Tested
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ | Max |
| Absolute Maximum Ratings | VDSS | 150 | V | ||||
| VGSS | 20 | V | |||||
| ID (Silicon Limited) | 144 | A | TC=25C | ||||
| ID (Package Limited) | 120 | A | TC=25C | ||||
| ID | 91 | A | TC=100C | ||||
| IDM | 480 | A | Pulsed | ||||
| PD (TC=25C) | 312 | W | |||||
| PD (TC=100C) | 125 | W | |||||
| EAS | 450 | mJ | Single Pulse Avalanche Energy | ||||
| TJ, Tstg | -55~150 | C | Junction and Storage Temperature Range | ||||
| Thermal Characteristics | RJA | 62.5 | C/W | Junction-to-Ambient | |||
| RJC | 0.4 | C/W | Junction-to-Case | ||||
| Static Characteristics | BVDSS | 150 | V | ID = 250A, VGS = 0V | 150 | - | - |
| VGS(th) | V | VDS = VGS, ID = 250A | 2.1 | 4.1 | - | ||
| IDSS | A | VDS = 120V, VGS = 0V | - | - | 1.0 | ||
| IGSS | A | VGS = 20V, VDS = 0V | - | - | 0.1 | ||
| RDS(ON) | m | VGS = 10V, ID = 50A | - | 6.2 | 7.5 | ||
| gfs | S | VDS = 10V, ID = 100A | - | 70 | - | ||
| VSD | V | IS = 50A, VGS = 0V | - | 0.9 | 1.2 | ||
| Dynamic Characteristics | Qg | nC | VDS = 50V, ID = 50A, VGS = 10V | - | 91 | - | |
| Qgs | - | 33 | - | ||||
| Qgd | - | 25 | - | ||||
| Ciss | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 6,220 | - | ||
| Coss | pF | - | 2,220 | - | |||
| Crss | pF | - | 94 | - | |||
| Switching Characteristics | td(on) | ns | VGS = 10V, VDS = 50V, ID = 50A , RG = 3.0 | - | 40 | - | |
| tr | ns | - | 28 | - | |||
| td(off) | ns | - | 69 | - | |||
| tf | ns | - | 20 | - | |||
| Other | Rg | f=1 MHz | - | 3 | - | ||
| Body Diode Characteristics | trr | ns | IF = 50A, dl/dt = 100A/s | - | 153 | - | |
| Qrr | nC | - | 655 | - |
2509121533_MagnaChip-Semicon-MDP15N075TH_C40483407.pdf
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