PNP Bipolar Transistor MDD Microdiode Semiconductor SS8550 Suitable for General Purpose Amplification
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers high collector current capability and is complementary to the SS8050 transistor. Encapsulated in a SOT-23 package, it is suitable for various electronic circuits.
Product Attributes
- Brand: Microdiode
- Complementary To: SS8050
- Marking: Y2
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V |
| Collector Current-Continuous | IC | -1.5 | A | |
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 0.3 | W |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55+150 | ||
| Collector Cut-off Current | ICBO | VCB=-40V, IE=0 | -0.1 | A |
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -0.1 | A |
| DC Current Gain | hFE | VCE=-1V, IC=-100mA | 120-400 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V |
| Transition Frequency | fT | VCE=-10V, IC=-50mA, f=30MHz | 100 | MHz |
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF |
| Thermal Resistance From Junction To Ambient | RJA | 417 | /W |
2411211950_MDD-Microdiode-Semiconductor-SS8550_C364314.pdf
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