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quality LRC S LPB8413DT0AG P Channel MOSFET Featuring Low RDS on Trench Technology and Halogen Free Material factory
quality LRC S LPB8413DT0AG P Channel MOSFET Featuring Low RDS on Trench Technology and Halogen Free Material factory

LRC S LPB8413DT0AG P Channel MOSFET Featuring Low RDS on Trench Technology and Halogen Free Material

Key Attributes
Model Number: S-LPB8413DT0AG
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
14A
RDS(on):
18mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
244pF
Number:
1 P-Channel
Output Capacitance(Coss):
292pF
Input Capacitance(Ciss):
3.974nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
50nC@5V
Mfr. Part #:
S-LPB8413DT0AG
Package:
V-DFN3333-8
Product Description

Product Overview

The S-LPB8413DT0AG is a P-Channel 40-V (D-S) MOSFET designed for load switch applications, DC/DC conversion, and motor drives. It features low RDS(on) trench technology and low thermal impedance, contributing to fast switching speeds. This device is RoHS compliant and Halogen Free. The S-prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Device Marking: S-LPB8413DT0AG
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification: AEC-Q101 qualified and PPAP capable (S-prefix)
  • Technology: Low RDS(on) trench technology
  • Package Type: DFN3333-8A
  • Channel Type: P-Channel
  • Voltage Rating: 40-V (D-S)

Technical Specifications

Parameter Symbol Unit Min. Typ. Max. Conditions
DraintoSource Voltage VDS V -40 - -
GatetoSource Voltage VGS V - - ±20
Operating Junction Temperature TJ -55 - 150
Storage Temperature Range Tstg -55 - 150
Continuous Drain Current (Note 1) ID A - - -14 TA = 70°C
Power Dissipation (Note 1) PD W - - 3.5 TA = 25°C
Power Dissipation (Note 1) PD W - - 2 TA = 70°C
Pulsed Drain Current (Note 2) IDM A - - -35 t≤10s
Pulsed Drain Current (Note 2) IDM A - - -81 Steady State
Maximum Junction-to-Ambient (Note 1) RθJA °C/W - - 50 TA = 25°C
Gate-Source Threshold Voltage VGS(TH) V -1 - -2 (VDS = VGS , ID = -250 µA)
Gate-Body leakage current IGSS nA - - ±100 (VDS =0V, VGS = ±20V)
Zero Gate Voltage Drain Current IDSS µA - - -1 (VDS = -32 V, VGS = 0 V, TA = 25°C)
Zero Gate Voltage Drain Current IDSS µA - - -10 (VDS = -32 V, VGS = 0 V, TJ = 55°C)
Drain-to-Source On-Resistance RDS(ON) mΩ - 4 6 (VGS = -10 V, ID = -1 A)
Drain-to-Source On-Resistance RDS(ON) mΩ - 6 8 (VGS = -4.5 V, ID = -1 A)
Diode Forward Voltage VSD V - - -1.2 (IS = -1 A, VGS = 0 V)
Total Gate Charge Qg nC - - 10 (VDS = -15 V, VGS = -5V ,ID = -1 A)
Gate to Source Charge Qgs nC - - 0.9 (VDS = -15 V, VGS = -5V ,ID = -1 A)
Gate to Drain Charge Qgd nC - - 0.4 (VDS = -15 V, VGS = -5V ,ID = -1 A)
Turn-on Delay Time td(ON) nS - - 10 (VDD=-15 V,RL=6Ω,ID=- 1A,VGEN=-10V)
Rise Time tr nS - - 18 (VDD=-15 V,RL=6Ω,ID=- 1A,VGEN=-10V)
Turn-Off Delay Time td(OFF) nS - - 12 (VDD=-15 V,RL=6Ω,ID=- 1A,VGEN=-10V)
Fall Time tf nS - - 9 (VDD=-15 V,RL=6Ω,ID=- 1A,VGEN=-10V)
Input Capacitance Ciss pF - - 3974 (VDS = -20 V, VGS = 0 V, f = 1 MHz)
Output Capacitance Coss pF - - 292 (VDS = -20 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance Crss pF - - 244 (VDS = -20 V, VGS = 0 V, f = 1 MHz)
DrainSource Breakdown Voltage VBRDSS V -40 - - (VGS = 0, ID = - 250µA)
Package Dimensions (A) A mm 0.60 0.65 0.70
Package Dimensions (A1) A1 mm 0.00 0.03 0.05
Package Dimensions (b) b mm 0.27 0.32 0.37
Package Dimensions (D) D mm 3.25 3.30 3.35
Package Dimensions (E) E mm 3.25 3.30 3.35
Package Dimensions (D1) D1 mm 2.22 2.27 2.32
Package Dimensions (E1) E1 mm 1.60 1.65 1.70
Package Dimensions (e) e mm 0.40 0.45 0.50
Package Dimensions (L) L mm 0.30 0.35 0.40
Package Dimensions (L1) L1 mm 0.152 REF
Package Dimensions (A3) A3 mm 0.65 BSC

2201121800_LRC-S-LPB8413DT0AG_C2936719.pdf

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