Extended Trench Gate N Channel Power Transistor MATSUKI MEE3710T for Power Conversion and Management
Key Attributes
Model Number:
MEE3710T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
56A
RDS(on):
23mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Pd - Power Dissipation:
155W
Input Capacitance(Ciss):
1.728nF@25V
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MEE3710T
Package:
TO-220
Product Description
Product Overview
The MEE3710T is a N-Channel enhancement mode power field effect transistor utilizing Force-MOS patented Extended Trench Gate (ETG) technology. This advanced technology minimizes on-state resistance and gate charge while enhancing avalanche capability. It is particularly suited for medium voltage applications such as chargers, adapters, notebook computer power management, and lighting dimming circuits, offering low in-line power loss in a very small surface mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Technology: Force-MOS patented Extended Trench Gate (ETG)
- Certifications: Pb-free
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDSS | 100 | V | |||
| VGSS | 20 | V | ||||
| ID | TC=25 | 56 | A | |||
| ID | TC=70 | 45 | A | |||
| IAS | L=0.5mH, TC=25 | 21 | A | |||
| EAS | L=0.5mH, TC=25 | 110 | mJ | |||
| IDM | 225 | A | ||||
| Electrical Characteristics | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | ||
| IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| IDSS | VDS=100V, VGS=0V | 1 | A | |||
| RDS(ON) | VGS=10V, ID=28A | 19 | 23 | m | ||
| Dynamic Characteristics | Qg | VDS=80V,VGS=10V,ID=28A | 25 | nC | ||
| Qgs | 10 | |||||
| Qgd | 6 | |||||
| Ciss | VDS=25V,VGS=0V, f=1.0MHz | 1728 | pF | |||
| Coss | 530 | |||||
| Crss | 32 | |||||
| Switching Characteristics | td(on) | VDS=50V, RL =1.8, VGS=10V,RG=2.5, ID=28A | 22 | ns | ||
| tr | 60 | |||||
| td(off) | 25 | |||||
| tf | 16 | |||||
| Diode Characteristics | VSD | IS=28A, VGS=0V | 0.9 | 1.2 | V | |
| Trr | IF=28A,VGS=0V,di/dt=100A/us | 40 | ns | |||
| Qrr | 60 | nC | ||||
| Thermal Characteristics | PD | TC=25 | 155 | W | ||
| RJC | 0.8 | /W |
2410121527_MATSUKI-MEE3710T_C3647157.pdf
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