MDD Microdiode Semiconductor MMBT4401 NPN transistor for switching and signal amplification circuits
Key Attributes
Model Number:
MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT4401
Package:
SOT-23-3
Product Description
Product Overview
The MMBT4401 is a general-purpose NPN switching transistor designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for signal amplification and switching circuits.
Product Attributes
- Brand: microdiode
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current -Continuous | 600 | mA | |||
| PC | Collector Power dissipation | 0.3 | W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| RJA | Thermal Resistance, junction to Ambient | 417 | /mW | |||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 40 | V | ||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100uA, IE = 0 | 60 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 100uA, IC = 0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 50V, IE = 0 | 40 | uA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC =0 | 0.1 | uA | ||
| hFE1 | DC current gain | VCE = 1V, IC = 150mA | 250 | |||
| hFE2 | DC current gain | VCE = 10V, IC = 20mA, f=100MHz | 300 | |||
| hFE3 | DC current gain | IC = 150mA, IB = 15mA | 1.2 | |||
| hFE4 | DC current gain | IC = 500mA, IB = 50mA | 0.75 | |||
| hFE5 | DC current gain | VCE = 1V, IC=1mA | 80 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.4 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.1 | V | ||
| tr | Rise time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 20 | ns | ||
| td | Delay time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 225 | ns | ||
| ts | Storage time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 60 | ns | ||
| tf | Fall time | VCC = 30V, IC = 150mA IB1=IB2=15mA | 0.1 | us | ||
| fT | Transition frequency | VCE = 30V, VEB =0.4V | 150 | MHZ | ||
| Cib | Capacitance | VCE = 1V, IC=1mA | 20 | pF | ||
| Cob | Capacitance | VCE = 1V, IC=0.1mA | 250 | pF |
2411211939_MDD-Microdiode-Semiconductor-MMBT4401_C408394.pdf
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