Single N channel Trench MOSFET MagnaChip Semicon AMDU040N014VRH with PDFN56 package and tested avalanche ruggedness
Key Attributes
Model Number:
AMDU040N014VRH
Product Custom Attributes
Mfr. Part #:
AMDU040N014VRH
Package:
PDFN-8(5x6)
Product Description
Product Overview
The AMDU040N014VRH is a single N-channel Trench power MOSFET from Magnachip Power Technology. It features enhanced avalanche ruggedness, 100% avalanche tested, and a maximum junction temperature of 175C. This AEC-Q101 qualified MOSFET is designed for DC/DC and AC/DC converters, as well as brushed and BLDC motor drive systems.
Product Attributes
- Brand: Magnachip Power Technology
- Technology: Trench power MOSFET
- Channel Type: N-channel, normal level
- Certifications: AEC-Q101 qualified, Halogen Free
- Package: PDFN56
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Conditions / Note | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-source Voltage | VDS | 40 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain current | ID | 194 | Tc=25°C | A | ||
| Pulsed drain current | IDM | 776 | Tc=25°C | A | ||
| Avalanche energy, single pulse | EAS | 288 | mJ | |||
| Total power dissipation | Ptot | 194 | Tc=25°C | W | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | ||
| ELECTRICAL CHARACTERISTICS (TJ = 25°C) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | 40 | VGS=0 V, ID=250 μA | V | ||
| Gate-source leakage current | IGSS | ±100 | VGS=±20 V, VDS=0 V | nA | ||
| Zero gate voltage drain current | IDSS | 1 | VDS=40 V, VGS=0 V, Tj=25°C | μA | ||
| Gate threshold voltage | VGS(th) | 2.35 | 3.85 | VDS=VGS, ID=250 μA | V | |
| Drain-source on-state resistance | RDS(on) | 1.1 | 1.4 | VGS=10 V, ID=50 A | mΩ | |
| Transconductance | gfs | 130 | VDS=10 V, ID=50 A | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input capacitance | Ciss | 5613 | VGS=0 V, VDS=20 V, f=1 MHz | pF | ||
| Output capacitance | Coss | 1594 | VGS=0 V, VDS=20 V, f=1 MHz | pF | ||
| Reverse transfer capacitance | Crss | 105 | VGS=0 V, VDS=20 V, f=1 MHz | pF | ||
| Turn-on delay time | td(on) | 27 | VDD=20 V, VGS=10 V, ID=50 A, RG,ext=3Ω | ns | ||
| Rise time | tr | 13 | VDD=20 V, VGS=10 V, ID=50 A, RG,ext=3Ω | ns | ||
| Turn-off delay time | td(off) | 66 | VDD=20 V, VGS=10 V, ID=50 A, RG,ext=3Ω | ns | ||
| Fall time | tf | 16 | VDD=20 V, VGS=10 V, ID=50 A, RG,ext=3Ω | ns | ||
| GATE CHARGE CHARACTERISTICS | ||||||
| Gate charge total | Qg | 71 | VDD=20 V, VGS=10 V, ID=50 A | nC | ||
| SOURCE-DRAIN DIODE | ||||||
| Diode continuous forward current | IS | 194 | A | |||
| Diode pulse current | IS,pulse | 776 | pulsed; tp ≤ 10 μs | A | ||
| Diode forward voltage | VSD | 0.86 | 1.2 | VGS=0 V, IF=50 A | V | |
| Reverse recovery charge | Qrr | 224 | IF=50 A, diF/dt=100 A/μs | nC | ||
| Reverse recovery time | trr | 106 | IF=50 A, diF/dt=100 A/μs | ns | ||
| THERMAL CHARACTERISTICS | ||||||
| Thermal resistance, junction - case | RθJC | 1.5 | K/W | |||
| Thermal resistance, junction - ambient | RθJA | 50 | Surface mounted FR-4 board by JEDEC (jesd51-7) | K/W | ||
2509121506_MagnaChip-Semicon-AMDU040N014VRH_C51891817.pdf
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