Power Management MOSFET LRC LPB2305LT1G 30V P Channel Enhancement Mode with Ultra Low On Resistance
Key Attributes
Model Number:
LPB2305LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53.18pF
Number:
1 P-Channel
Output Capacitance(Coss):
90.74pF
Input Capacitance(Ciss):
826.18pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
LPB2305LT1G
Package:
SOT-23LC
Product Description
Product Overview
The LPB2305LT1G is a 30V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, including low RDS(ON) at various gate-source voltages and drain currents, making it suitable for advanced applications requiring efficient power management.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free.
- Device Marking: P05
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | |||||
| Drain-Source Voltage | VDSS | - | - | -30 | V |
| Gate-to-Source Voltage Continuous | VGS | - | - | 14 | V |
| Continuous Drain Current | ID | - | -4.2 | - | A |
| Pulsed Drain Current (Note 1) | IDM | - | -30 | - | A |
| Power Dissipation | PD | - | - | 1.4 | W |
| Thermal Resistance, JunctiontoAmbient (Note 2) | RJA | - | - | 140 | C/W |
| Junction and Storage temperature | TJ,Tstg | -55 | - | +150 | C |
| Electrical Characteristics (Ta= 25C) | |||||
| Drain-Source Voltage (ID =-250A, VGS =0V) | V(BR)DSS | -30 | - | - | V |
| Zero Gate Voltage Drain Current (VDS = -24V, VGS =0V) | IDSS | - | - | -1 | A |
| Gate-body Leakage Current (VDS =0V, VGS =14V) | IGSS | - | - | 100 | nA |
| Gate Threshold Voltage (VDS =VGS , ID =-250A) | VGS(th) | -1.3 | - | - | V |
| Static Drain-Source On resistance (VGS = -10V,ID= -4.2A ) | RDS(ON) | - | - | 70 | m |
| Static Drain-Source On resistance (VGS = -4.5V,ID= -4.0A ) | RDS(ON) | - | - | 85 | m |
| Static Drain-Source On resistance (VGS = -2.5V,ID= -1.0A ) | RDS(ON) | - | - | 130 | m |
| Input Capacitance | Ciss | - | 11.36 | - | pF |
| Output Capacitance | Coss | - | 2.32 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 34.88 | - | pF |
| Turn-On Delay Time | td(on) | - | 53.18 | - | ns |
| Turn-On Rise Time | tr | - | - | - | ns |
| Turn-Off Delay Time | td(off) | - | 826.18 | - | ns |
| Turn-Off Fall Time | tf | - | 3.52 | - | ns |
| Static Diode Forward Voltage (IS = -1A, VGS =0V) | VSD | - | -1 | - | V |
| Ordering Information | |||||
| Model | Device Marking | Shipping | Package | ||
| LPB2305LT1G | P05 | 3000/Tape&Reel | SOT23LC | ||
| LPB2305LT3G | P05 | 10000/Tape&Reel | SOT23LC | ||
2410010101_LRC-LPB2305LT1G_C2842080.pdf
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