High Cell Density N Channel Power Transistor MATSUKI ME2612 Featuring DMOS Trench Technology Package
Key Attributes
Model Number:
ME2612
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-
RDS(on):
375mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
69pF
Input Capacitance(Ciss):
543pF
Pd - Power Dissipation:
2.9W
Gate Charge(Qg):
18.3nC@10V
Mfr. Part #:
ME2612
Package:
SOT-223
Product Description
Product Overview
The ME2612 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss within a compact surface-mount package.
Product Attributes
- Brand: ME (implied from product name ME2612)
- Product Variants: ME2612 (Pb-free), ME2612-G (Green product-Halogen free)
- Package Type: SOT-223
- Certifications: Pb-free, Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TA=25) | ID | 2.2 | A | |||
| Continuous Drain Current (TA=70) | ID | 1.7 | ||||
| Pulsed Drain Current | IDM | 9 | A | |||
| Maximum Power Dissipation (TA=25) | PD | 2.9 | W | |||
| Maximum Power Dissipation (TA=70) | PD | 1.9 | ||||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RθJA | 42 | /W | |||
| Static Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | VBR(DSS) | 150 | V | |||
| Gate Threshold Voltage (VDS=VGS, ID=250µA) | VGS(th) | 1.0 | 3.0 | V | ||
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |||
| Zero Gate Voltage Drain Current (VDS=120V, VGS=0V) | IDSS | 1 | µA | |||
| Drain-Source On-Resistance (VGS=10V, ID=3A) | RDS(ON) | 310 | 375 | mΩ | ||
| Drain-Source On-Resistance (VGS=4.5V, ID=2A) | RDS(ON) | 310 | 390 | |||
| Diode Forward Voltage (IS=2.5A, VGS=0V) | VSD | 0.8 | 1.2 | V | ||
| Dynamic Electrical Characteristics (TJ =25 Noted) | ||||||
| Total Gate Charge (VDS=80V, VGS=10V, ID=3A) | Qg | 18.3 | nC | |||
| Total Gate Charge (VDS=80V, VGS=4.5V, ID=3A) | Qg | 10.2 | ||||
| Gate-Source Charge | Qgs | 3.4 | ||||
| Gate-Drain Charge | Qgd | 5 | ||||
| Input Capacitance (VDS=15V, VGS=0V, f=1.0MHz) | Ciss | 543 | pF | |||
| Output Capacitance | Coss | 69 | ||||
| Reverse Transfer Capacitance | Crss | 24 | ||||
| Turn-On Delay Time (VDD=50V, RL=50Ω, VGEN=10V, RG=6Ω) | td(on) | 12.2 | ns | |||
| Turn-On Rise Time | tr | 4.3 | ||||
| Turn-Off Delay Time | td(off) | 39.3 | ||||
| Turn-Off Fall Time | tf | 14.4 | ||||
2410121518_MATSUKI-ME2612_C2841351.pdf
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