500V N channel MOSFET MagnaChip Semicon MDF5N50FTH ideal for power control and lighting applications
Key Attributes
Model Number:
MDF5N50FTH
Product Custom Attributes
Mfr. Part #:
MDF5N50FTH
Package:
TO-220F
Product Description
MDF5N50F N-channel MOSFET 500V
The MDF5N50F utilizes advanced Magnachip's MOSFET Technology, offering low on-state resistance, high switching performance, and excellent quality. This MOSFET is well-suited for applications such as Switched-Mode Power Supplies (SMPS), High-Intensity Discharge (HID) lighting, and general-purpose power management.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Product Line: MDF5N50F
- Technology: N-channel MOSFET
- Certifications: Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating/Condition | Unit | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta = 25oC) | V | 500 | ||
| Gate-Source Voltage | VGSS | (Ta = 25oC) | V | 30 | ||
| Continuous Drain Current | ID | TC=25oC | A | 4.5* | ||
| Continuous Drain Current | ID | TC=100oC | A | 2.8* | ||
| Pulsed Drain Current | IDM | (1) | A | 18* | ||
| Power Dissipation | PD | TC=25oC | W | 27 | ||
| Derate above 25 oC | W/ oC | 0.22 | ||||
| Repetitive Avalanche Energy | EAR | (1) | mJ | 93 | ||
| Peak Diode Recovery dv/dt | dv/dt | (3) | V/ns | 4.5 | ||
| Single Pulse Avalanche Energy | EAS | (4) | mJ | 230 | ||
| Junction and Storage Temperature Range | TJ, Tstg | oC | -55 | 150 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (1) | oC/W | 62.5 | ||
| Thermal Resistance, Junction-to-Case | RJC | (1) | oC/W | 4.6 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | V | 500 | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | V | 2.5 | 4.5 | |
| Drain Cut-Off Current | IDSS | VDS = 500V, VGS = 0V | A | 10 | ||
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | nA | 100 | ||
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 2.5A | 1.25 | 1.58 | ||
| Forward Transconductance | gfs | VDS = 30V, ID = 2.5A | S | 3.3 | ||
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 500V, ID = 5.0A, VGS = 10V(3) | nC | 12.1 | 15.73 | |
| Gate-Source Charge | Qgs | nC | 3.6 | |||
| Gate-Drain Charge | Qg d | nC | 4.3 | |||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | pF | 500 | 650 | |
| Reverse Transfer Capacitance | Crss | pF | 1.5 | 2.25 | ||
| Output Capacitance | Coss | pF | 65 | 84.5 | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 250V, ID = 5.0A, RG = 25(3) | ns | 23 | 48.3 | |
| Rise Time | tr | ns | 30 | 60 | ||
| Turn-Off Delay Time | td(off) | ns | 37 | 77.7 | ||
| Fall Time | tf | ns | 29 | 60.9 | ||
| Drain-Source Body Diode Characteristics | ||||||
| Maximum Continuous Drain to Source Diode Forward Current | IS | A | 4.5 | |||
| Source-Drain Diode Forward Voltage | VSD | IS = 5.0A, VGS = 0V | V | 1.4 | ||
| Body Diode Reverse Recovery Time | trr | IF = 5.0A, dl/dt = 100A/s(3) | ns | 80 | ||
| Body Diode Reverse Recovery Charge | Qrr | C | 1.6 | |||
2509121506_MagnaChip-Semicon-MDF5N50FTH_C22972531.pdf
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