High Cell Density DMOS Trench Technology Dual P Channel MOSFET MATSUKI ME4925 G for Power Management
Key Attributes
Model Number:
ME4925-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V,7.1A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
2 P-Channel
Input Capacitance(Ciss):
1.49nF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
ME4925-G
Package:
SOP-8
Product Description
Product Overview
The ME4925 is a Dual P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Series: ME4925/ME4925-G
- Certifications: Pb-free (ME4925), Green product-Halogen free (ME4925-G)
Technical Specifications
| Parameter | Symbol | Maximum Ratings | Unit | Electrical Characteristics | Symbol | Limit | Unit | Typical Characteristics | Symbol | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | Drain-source breakdown voltage | VBR(DSS) | -30 | V | ||||||
| Gate-Source Voltage | VGS | 20 | V | Gate Threshold Voltage | VGS(th) | -1 | -3 | V | |||||
| Continuous Drain Current (TA=25) | ID | -8 | A | Gate Leakage Current | IGSS | 100 | nA | ||||||
| Continuous Drain Current (TA=70) | ID | -6.3 | A | Zero Gate Voltage Drain Current | IDSS | -1 | A | ||||||
| Pulsed Drain Current | IDM | -32 | A | Drain-Source On-Resistance | RDS(ON) | 16 | 20 | m | |||||
| Maximum Power Dissipation (TA=25) | PD | 2 | W | Drain-Source On-Resistance | RDS(ON) | 21 | 26 | m | |||||
| Maximum Power Dissipation (TA=70) | PD | 1.3 | W | Diode Forward Voltage | VSD | -0.7 | -1.2 | V | |||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | Total Gate Charge | Qg | 37 | nC | |||||||
| Thermal Resistance-Junction to Ambient | RJA | 62.5 | /W | Gate-Source Charge | Qgs | 5.6 | |||||||
| Gate-Drain Charge | Qgd | 8.7 | |||||||||||
| Input capacitance | Ciss | 1490 | pF | ||||||||||
| Output Capacitance | Coss | 202 | |||||||||||
| Reverse Transfer Capacitance | Crss | 183 | |||||||||||
| Gate-Resistance | Rg | 6.2 | |||||||||||
| Turn-On Delay Time | td(on) | 39.1 | ns | ||||||||||
| Turn-On Rise Time | tr | 16.9 | ns | ||||||||||
| Turn-Off Delay Time | td(off) | 107 | ns | ||||||||||
| Turn-Off Fall Time | tf | 26.7 | ns |
2410121505_MATSUKI-ME4925-G_C709762.pdf
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