MDD Microdiode Semiconductor MDD2301 P Channel MOSFET Ideal for DC DC Converters and Load Switching
Key Attributes
Model Number:
MDD2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-50℃~+150℃
RDS(on):
33mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 P-Channel
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
330pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
800pC
Mfr. Part #:
MDD2301
Package:
SOT-23
Product Description
Product Overview
The MDD2301 is a -20V P-Channel Enhancement Mode MOSFET designed for load switching and DC/DC converter applications in portable devices. It features low RDS(on) performance and is housed in a SOT-23 package.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | (TA=25unless otherwise noted) | -20 | V | ||
| VGS | 12 | V | ||||
| ID | -3.8 | A | ||||
| Power Dissipation | PD | (Note 2) | 1.2 | W | ||
| Thermal Resistance | RJA | (Note 2) | 100 | /W | ||
| Junction and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current | IDM | (Note 1) | -15 | A | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | -20 | V | ||
| Gate-Source Leakage Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Drain-Source Leakage Current | IGSS | VGS=10V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -0.4 | -1 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | 33 | 45 | m | |
| VGS=-2.5V, ID=-2A | 46 | 60 | m | |||
| Capacitance | Ciss | VDS=-10V VGS=0V f=1MHz | 330 | pF | ||
| Coss | 50 | pF | ||||
| Crss | 45 | pF | ||||
| Gate Charge | Qg | VDS=-10V VGS=-2.5V ID=-3A | 6.6 | nC | ||
| Qgs | 0.7 | nC | ||||
| Qgd | 1.4 | nC | ||||
| Switching Characteristics | td(on) | VDS=-10V VGS =-4.5V ID=-3A RG=3.3 | 11 | ns | ||
| tr | 12 | ns | ||||
| td(off) | 18 | ns | ||||
| tf | 30 | ns | ||||
| Source Drain Diode Characteristics | ISD | -1.5 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=-2A, VGS=0V | -1.2 | -0.85 | V |
2501101639_MDD-Microdiode-Semiconductor-MDD2301_C427391.pdf
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