Low voltage power transistor MATSUKI ME2320D featuring low inline power loss and high side switching
Key Attributes
Model Number:
ME2320D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
ME2320D
Package:
SOT-23
Product Description
Product Overview
The ME2320D is an N-Channel logic enhancement mode power field-effect transistor designed with high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package. It features an ESD protection function.
Product Attributes
- Brand: Matsuki Electric/Force mos
- Product Variants: ME2320D (Pb-Free), ME2320D-G (Green product-Halogen free)
- Certifications: Pb-Free, Green product-Halogen free
Technical Specifications
| Parameter | Symbol | ME2320D/ME2320D-G (Ver 4.5, Jun 2012) | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±8 | V |
| Continuous Drain Current (TA=25) | ID | 6.4 | A |
| Continuous Drain Current (TA=70) | ID | 5.1 | A |
| Pulsed Drain Current | IDM | 26 | A |
| Maximum Power Dissipation (TA=25) | PD | 1.4 | W |
| Maximum Power Dissipation (TA=70) | PD | 0.9 | W |
| Operating Junction Temperature | TJ | -55 to 150 | |
| Thermal Resistance-Junction to Ambient* | RθJA | 90 | /W |
| Static Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | V(BR)DSS | 20 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250µA) | VGS(th) | 0.4 - 1 | V |
| Gate Leakage Current (VDS=0V, VGS=±4.5V) | IGSS | ±1 | µA |
| Gate Leakage Current (VDS=0V, VGS=±8V) | IGSS | ±10 | µA |
| Zero Gate Voltage Drain Current (VDS=20V, VGS=0V) | IDSS | 1 | µA |
| Drain-Source On-Resistance (VGS=4.5V, ID=6.5A) | RDS(ON) | 17 - 21 | mΩ |
| Drain-Source On-Resistance (VGS=2.5V, ID=5.5A) | RDS(ON) | 20 - 25 | mΩ |
| Drain-Source On-Resistance (VGS=1.8V, ID=5A) | RDS(ON) | 25 - 33 | mΩ |
| Diode Forward Voltage (IS=1A, VGS=0V) | VSD | 0.6 - 1 | V |
| Dynamic Electrical Characteristics | |||
| Total Gate Charge (VDS=10V, VGS=4.5, ID=6.5A) | Qg | 10 | nC |
| Gate-Source Charge | Qgs | 0.9Qg | nC |
| Gate-Drain Charge | Qgd | 3 | nC |
| Input Capacitance (VDS=10V, VGS=0V,f=1MHz) | Ciss | 150 | pF |
| Output Capacitance | Coss | 95 | pF |
| Reverse Transfer Capacitance | Crss | 25 | pF |
| Turn-On Delay Time (VDS=10V, RL=1.5Ω, VGS=5V, RGEN=3Ω) | td(on) | 250 | ns |
| Turn-On Rise Time | tr | 420 | ns |
| Turn-Off Delay Time | td(off) | 3950 | ns |
| Turn-Off Fall Time | tf | 3700 | ns |
Applications
- Power Management in Notebook
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
Features
- RDS(ON)=21mΩ@VGS=4.5V
- RDS(ON)=25 mΩ@VGS=2.5V
- RDS(ON)=33 mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
2410121449_MATSUKI-ME2320D_C165235.pdf
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