MDD Microdiode Semiconductor MDDG10R04B 100V enhancement mode MOSFET for power management solutions
Key Attributes
Model Number:
MDDG10R04B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
135A
RDS(on):
3.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Output Capacitance(Coss):
1.21nF
Input Capacitance(Ciss):
6.32nF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
88nC@10V
Mfr. Part #:
MDDG10R04B
Package:
TO-263-3
Product Description
Product Overview
The MDDG10R04B is a 100V N-Channel Enhancement Mode MOSFET designed for various power management applications. It offers low RDS(ON) & FOM, extremely low switching loss, and excellent reliability, making it suitable for battery management, power management for inverter systems, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | -- | -- | V |
| Gate-Source Leakage Current | IGSS | VGS=20V | -- | -- | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2 | -- | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V | -- | 3.6 | -- | m |
| Input Capacitance | Ciss | VGS=0V, VDS=50V, f=100kHz | -- | 6320 | -- | pF |
| Output Capacitance | Coss | VGS=0V, VDS=50V, f=100kHz | -- | 1210 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=50V, f=100kHz | -- | 41 | -- | pF |
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=100A | -- | 88 | -- | nC |
| Gate Source Charge | Qgs | VGS=10V, VDS=50V, ID=100A | -- | 30 | -- | nC |
| Gate Drain Charge | Qgd | VGS=10V, VDS=50V, ID=100A | -- | 16 | -- | nC |
| Turn on Delay Time | td(on) | VGS=10V, VDS=50V, ID=50A, RG=1.6 | -- | 27 | -- | ns |
| Turn on Rise Time | tr | VGS=10V, VDS=50V, ID=50A, RG=1.6 | -- | 59 | -- | ns |
| Turn Off Delay Time | td(off) | VGS=10V, VDS=50V, ID=50A, RG=1.6 | -- | 48 | -- | ns |
| Turn Off Fall Time | tf | VGS=10V, VDS=50V, ID=50A, RG=1.6 | -- | 14 | -- | ns |
| Drain-Source Diode Forward Voltage | VSD | IS=20A, VGS=0V | -- | 1.3 | -- | V |
| Body Diode Reverse Recovery Time | trr | IS=20A, dIs/dt=100A/s | -- | -- | 68 | ns |
| Body Diode Reverse Recovery Charge | Qrr | IS=20A, dIs/dt=100A/s | -- | 4.2 | -- | nC |
| Continuous Drain Current | ID | Tc=25 | -- | -- | 135 | A |
| Continuous Drain Current | ID | Tc=100 | -- | -- | 105 | A |
| Power Dissipation | PD | Note 3 | -- | -- | 214 | W |
| Junction Temperature | TJ | -- | -55 | -- | 150 | |
| Storage Temperature | Tstg | -- | -55 | -- | 150 | |
| Pulsed Drain Current | ID,pulse | Note 1 | -- | -- | 548 | A |
| Avalanche Current | IAS | Note 1 | -- | -- | 340 | A |
| Avalanche Energy | EAS | Note 1 | -- | -- | 0.75 | mJ |
| Thermal Resistance, Junction-Case | RJC | -- | -- | 0.75 | -- | C/W |
| Thermal Resistance, Junction-Ambient | RJA | Note 2 | -- | 62 | -- | C/W |
2507221720_MDD-Microdiode-Semiconductor-MDDG10R04B_C49382863.pdf
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