High voltage MOSFET MASPOWER MS2N300HGC0 optimized for power supplies and fast switching performance
Product Overview
The MS2N300HGC0 H1.02 is a high-performance Maspower MOSFET designed for high-voltage switching applications. It features 100% avalanche tested, fast intrinsic diode, minimized gate charge, very low intrinsic capacitances, and high-speed switching capabilities. Ideal for High Voltage Power Supplies, PV Inverters, and general switching applications.
Product Attributes
- Brand: Maspower
- Model: MS2N300HGC0 H1.02
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | ID = 250 A, VGS = 0 | 3000 | V | ||
| Zero gate voltage drain current | IDSS | VDS = Max rating | 10 | 250 | A | |
| Zero gate voltage drain current | IDSS | VDS=Max rating, TC=125 C | 250 | A | ||
| Gate-body leakage current | IGSS | VGS = 30 V | 200 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3.5 | 5.5 | V | |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 2A | 19 | 25 | ||
| Forward transconductance | gfs | VDS = 50 V, ID = 2A | 1.2 | 2.7 | S | |
| Input capacitance | Ciss, Coss, Crss | VDS=25V,f=1MHz,VGS=0 | 2500 | pF | ||
| Output capacitance | ||||||
| Reverse transfer capacitance | ||||||
| Total gate charge | Qg | VDD=1500V,ID=2A, VGS=10V | 80 | nC | ||
| Gate-source charge | Qgs | 12 | ||||
| Gate-drain charge | Qgd | 48 | ||||
| Turn-on delay time | td(on) | Resistive load VDD = 1500 V, ID =2A, VGS = 10 V, RG = 5(External) | 19 | ns | ||
| Rise time | tr | 23 | ||||
| Turn-off-delay time | td(off) | 52 | ||||
| Fall time | tf | 53 | ||||
| Source-drain current | ISD | 2 | A | |||
| Source-drain current (pulsed) | ISDM | 8 | ||||
| Forward on voltage | VSD | ISD= 1A, VGS= 0 | 0.9 | 1.5 | V | |
| Reverse recovery time | trr | ISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C | 600 | ns | ||
| Reverse recovery charge | Qrr | ISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C | 540 | nC | ||
| Reverse recovery current | IRRM | ISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C | 1.2 | A | ||
| Reverse recovery time | trr | ISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C | 800 | ns | ||
| Reverse recovery charge | Qrr | ISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C | 420 | nC | ||
| Reverse recovery current | IRRM | ISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C | 1.5 | A |
2411261901_MASPOWER-MS2N300HGC0_C37635849.pdf
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