High voltage MOSFET MASPOWER MS2N300HGC0 optimized for power supplies and fast switching performance

Key Attributes
Model Number: MS2N300HGC0
Product Custom Attributes
Drain To Source Voltage:
3kV
Current - Continuous Drain(Id):
2A
RDS(on):
19Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
191pF
Pd - Power Dissipation:
431W
Input Capacitance(Ciss):
2.5nF
Gate Charge(Qg):
80nC@1500V
Mfr. Part #:
MS2N300HGC0
Package:
TO-247
Product Description

Product Overview

The MS2N300HGC0 H1.02 is a high-performance Maspower MOSFET designed for high-voltage switching applications. It features 100% avalanche tested, fast intrinsic diode, minimized gate charge, very low intrinsic capacitances, and high-speed switching capabilities. Ideal for High Voltage Power Supplies, PV Inverters, and general switching applications.

Product Attributes

  • Brand: Maspower
  • Model: MS2N300HGC0 H1.02

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Drain-source breakdown voltageV(BR)DSSID = 250 A, VGS = 03000V
Zero gate voltage drain currentIDSSVDS = Max rating10250A
Zero gate voltage drain currentIDSSVDS=Max rating, TC=125 C250A
Gate-body leakage currentIGSSVGS = 30 V200nA
Gate threshold voltageVGS(th)VDS = VGS, ID = 250 A3.55.5V
Static drain-source on resistanceRDS(on)VGS = 10V, ID = 2A1925
Forward transconductancegfsVDS = 50 V, ID = 2A1.22.7S
Input capacitanceCiss, Coss, CrssVDS=25V,f=1MHz,VGS=02500pF
Output capacitance
Reverse transfer capacitance
Total gate chargeQgVDD=1500V,ID=2A, VGS=10V80nC
Gate-source chargeQgs12
Gate-drain chargeQgd48
Turn-on delay timetd(on)Resistive load VDD = 1500 V, ID =2A, VGS = 10 V, RG = 5(External)19ns
Rise timetr23
Turn-off-delay timetd(off)52
Fall timetf53
Source-drain currentISD2A
Source-drain current (pulsed)ISDM8
Forward on voltageVSDISD= 1A, VGS= 00.91.5V
Reverse recovery timetrrISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C600ns
Reverse recovery chargeQrrISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C540nC
Reverse recovery currentIRRMISD=2A, -di/dt=100A/s, VDD= 1500V, TJ=25C1.2A
Reverse recovery timetrrISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C800ns
Reverse recovery chargeQrrISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C420nC
Reverse recovery currentIRRMISD=2A, di/dt=100A/s, VDD= 1500 V, TJ=125C1.5A

2411261901_MASPOWER-MS2N300HGC0_C37635849.pdf

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