Compact P channel power MOSFET MATSUKI ME4413D-G with high cell density and low on state resistance
Key Attributes
Model Number:
ME4413D-G
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
11.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
-
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
2.78W
Gate Charge(Qg):
39nC@4.5V
Mfr. Part #:
ME4413D-G
Package:
SOP-8
Product Description
Product Overview
The ME4413D is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki (implied by datasheet copyright)
- Certifications: Pb-free (ME4413D), Green product (ME4413D-G)
- Package Type: SOP-8
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -12 | V | |
| Gate-Source Voltage | VGSS | ±8 | V | |
| Continuous Drain Current | ID | -11.5 | A | TA=25 |
| -9.2 | A | TA=70 | ||
| Pulsed Drain Current | IDM | -46 | A | |
| Maximum Power Dissipation | PD | 2.78 | W | TA=25 |
| 1.78 | W | TA=70 | ||
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 45 | /W | Steady state |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -12 | V | VGS=0V, ID=-250A |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1 | V | VDS=VGS, ID=-250A |
| Gate Leakage Current | IGSS | ±10 | μA | VDS=0V, VGS=±8V |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-12V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 10.5 to 13 | mΩ | VGS=-4.5V, ID=-11A |
| 13.5 to 17 | mΩ | VGS=-2.5V, ID=-10A | ||
| 20.5 to 26 | mΩ | VGS=-1.8V, ID=-6A | ||
| Diode Forward Voltage | VSD | -0.6 to -1.2 | V | IS=-1A, VGS=0V |
| Dynamic Characteristics | ||||
| Total Gate Charge | Qg | 39 | nC | VDS=-6V, VGS=-4.5V, ID=-11A |
| Gate-Source Charge | Qgs | 8.1 | nC | VDS=-6V, VGS=-4.5V, ID=-11A |
| Gate-Drain Charge | Qgd | 14 | nC | VDS=-6V, VGS=-4.5V, ID=-11A |
| Gate resistance | Rg | 5.5 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Input Capacitance | Ciss | 2700 | pF | VDS=-6V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 760 | pF | VDS=-6V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 240 | pF | VDS=-6V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 74 | ns | VDS=-6V, RL =6Ω, RGEN=3Ω, VGS=-4.5V |
| Turn-On Rise Time | tr | 40 | ns | VDS=-6V, RL =6Ω, RGEN=3Ω, VGS=-4.5V |
| Turn-Off Delay Time | td(off) | 140 | ns | VDS=-6V, RL =6Ω, RGEN=3Ω, VGS=-4.5V |
| Turn-Off Fall time | tf | 250 | ns | VDS=-6V, RL =6Ω, RGEN=3Ω, VGS=-4.5V |
2410121513_MATSUKI-ME4413D-G_C2693574.pdf
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