Soft body diode featured in MDD Microdiode Semiconductor MDDG10R20D N Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
MDDG10R20D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
RDS(on):
20mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.5pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
70W
Output Capacitance(Coss):
375pF
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
MDDG10R20D
Package:
TO-252
Product Description
Product Overview
The MDDG10R20D is a 100V N-Channel Enhancement Mode MOSFET utilizing MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. Optimized for minimal on-state resistance and superior switching performance, it features an extremely low reverse recovery charge and a best-in-class soft body diode. This RoHS compliant MOSFET is ideal for power management in Telecom, Industrial Automation, Motor Drives, and Uninterruptible Power Supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.
Product Attributes
- Brand: MDD Semiconductor
- Model: MDDG10R20D
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: RoHS Compliant
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Unit | Min | Typ | Max | Condition |
| Drain-Source Breakdown Voltage | V(BR)DSS | V | 100 | VGS=0V, ID=250A | ||
| Gate-Source Leakage Current | IGSS | nA | 100 | VGS=20V | ||
| Gate-Source Leakage Current | IGSS | nA | -100 | VGS=-20V | ||
| Drain-Source Leakage Current | IDSS | A | 1 | VDS=100V, VGS=0V | ||
| Gate Threshold Voltage | VGS(TH) | V | 1.6 | 2.2 | VDS=VGS, ID=250A | |
| Drain-Source On-State Resistance | RDS(ON) | m | 1.2 | 20 | VGS=10V, ID=20A | |
| Continuous Drain Current | ID | A | 45 | Calculated continuous current based on maximum allowable junction temperature. | ||
| Pulsed Drain Current | IDM | A | 180 | Repetitive rating, pulse width limited by max. junction temperature. | ||
| Single Pulsed Avalanche Energy | EAS | mJ | 26 | TJ=25C, VDD=50V, VGS=10V, L= 0.1mH, Rg= 25, IAS =23A. | ||
| Thermal Resistance, steady-state | RJA | C/W | 40 | TA=25C | ||
| Power Dissipation | PD | W | 70 | TA=25C | ||
| Junction Temperature | TJ | C | -55 | 150 | ||
| Storage Temperature | Tstg | C | -55 | 150 | ||
| Drain-Source Diode Forward Voltage | VSD | V | 1.0 | IS=20A, VGS=0V | ||
| Body Diode Reverse Recovery Time | trr | ns | 35 | IF=20A, di/dt=100A/s | ||
| Body Diode Reverse Recovery Charge | Qrr | nC | 50 | IF=20A, di/dt=100A/s | ||
| Input Capacitance | Ciss | pF | 940 | VGS=0V, VDS=50V, f=1MHz | ||
| Output Capacitance | Coss | pF | 375 | VGS=0V, VDS=50V, f=1MHz | ||
| Reverse Transfer Capacitance | Crss | pF | 10.5 | VGS=0V, VDS=50V, f=1MHz | ||
| Total Gate Charge | Qg | nC | 15 | VGS=10V, VDS=50V, ID=25A | ||
| Gate Source Charge | Qgs | nC | 5 | VGS=10V, VDS=50V, ID=25A | ||
| Gate Drain Charge | Qgd | nC | 3 | VGS=10V, VDS=50V, ID=25A | ||
| Turn on Delay Time | td(on) | ns | 12 | 35 | VDD =50V, ID=25A, RG =2.2 | |
| Turn on Rise Time | tr | ns | 16 | VDD =50V, ID=25A, RG =2.2 | ||
| Turn Off Fall Time | tf | ns | 54 | VDD =50V, ID=25A, RG =2.2 | ||
| Turn Off Delay Time | td(off) | ns | 6 | VDD =50V, ID=25A, RG =2.2 |
2504101957_MDD-Microdiode-Semiconductor-MDDG10R20D_C46533754.pdf
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