High voltage MOSFET MASPOWER MS15N170HGC0 designed for demanding switching and inverter applications
Key Attributes
Model Number:
MS15N170HGC0
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
42.5pF
Output Capacitance(Coss):
505pF
Input Capacitance(Ciss):
5.1nF
Pd - Power Dissipation:
176W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
MS15N170HGC0
Package:
TO-247
Product Description
Product Overview
The MS15N170HGC0 H1.01 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high-speed switching, and very low on-resistance. This makes it ideal for use in PV inverters and other switching applications.
Product Attributes
- Brand: Maspower
- Model: MS15N170HGC0 H1.01
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | ID = 1 mA, VGS = 0 | 1700 | V | ||
| Zero gate voltage drain current | IDSS | VDS = Max rating | 100 | 1000 | A | |
| Zero gate voltage drain current | IDSS | VDS=Max rating, TC=125 C | 1000 | A | ||
| Gate-body leakage current | IGSS | VGS = 30 V | 200 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3 | 4 | 5 | V |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 1A | 1.75 | 2.5 | ||
| Forward transconductance | gfs | VDS = 15 V, ID = 4 | 7 | S | ||
| Input capacitance | Ciss, Coss, Crss | VDS=25V,f=1MHz,VGS=0 | 5100, 505, 42.5 | pF | ||
| Output capacitance | ||||||
| Reverse transfer capacitance | ||||||
| Total gate charge | Qg | VDD=1200V,ID=15A,VGS=10V | 42 | nC | ||
| Gate-source charge | Qgs | 14 | nC | |||
| Gate-drain charge | Qgd | 48 | nC | |||
| Turn-on delay time | td(on) | VDD = 750 V, ID =7 A, RG = 4.7 , VGS = 10 V | 50 | ns | ||
| Rise time | tr | 16 | ns | |||
| Turn-off-delay time | td(off) | 100 | ns | |||
| Fall time | tf | 80 | ns | |||
| Source-drain current | ISD | 12 | A | |||
| Source-drain current (pulsed) | ISDM | 48 | A | |||
| Forward on voltage | VSD | ISD= 15 A, VGS= 0 | 1.5 | V | ||
| Reverse recovery time | trr | ISD= 15A, di/dt=100A/s, VDD= 60 V | 950 | ns | ||
| Reverse recovery charge | Qrr | 9 | C | |||
| Reverse recovery current | IRRM | 20 | A | |||
| Reverse recovery time | trr | SD=15A, di/dt=100A/s, VDD= 60V, TJ=150C | 900 | ns | ||
| Reverse recovery charge | Qrr | 8.5 | C | |||
| Reverse recovery current | IRRM | 19 | A |
2411220701_MASPOWER-MS15N170HGC0_C19724673.pdf
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