High voltage N channel MOSFET MASPOWER MS18N100HGC0 suitable for power supplies and LED applications
Key Attributes
Model Number:
MS18N100HGC0
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
2.84nF
Pd - Power Dissipation:
470W
Gate Charge(Qg):
66.64nC@10V
Mfr. Part #:
MS18N100HGC0
Package:
TO-247
Product Description
Product Overview
The MS18N100HGC0 H1.05 from Maspower is a high-efficiency N-channel MOSFET designed for demanding power applications. Featuring a VDS of 1000V and ID of 18A, it offers low Crss (typ 30pF), low gate charge, and improved dv/dt capability due to its planar Mos structure. Ideal for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies.
Product Attributes
- Brand: Maspower
- Model: MS18N100HGC0 H1.05
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDSS | ID=250A,VGS=0V | 1000 | V | ||
| ID | TC=25 | 18 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Drain Current-continuous | ID | TC=100 | 12 | A | ||
| Drain Current-pulse | IDM | (note1) | 52 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Tj=25,IAR=4A,VDD=50V)(note2) | 750 | mJ | ||
| Maximum Power Dissipation | PD | TC=25 | 470 | W | ||
| Derate above 25 | 3.76 | W/ | ||||
| Peak Diode Recovery voltage slope | dv/dt | (note3) | 4.1 | V/ns | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Drain-Source Voltage | BVDSS | ID=250A,VGS=0V | 1000 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V, Tc=25 | 1 | A | ||
| Tc=125 | 10 | A | ||||
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 4 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=9A | 0.55 | 0.75 | ||
| Forward Transconductance | gfs | VDS=40V,ID=13A (note4) | 27 | S | ||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | 2840 | pF | ||
| Output capacitance | Coss | 290 | pF | |||
| Reverse transfer capacitance | Crss | 30 | pF | |||
| Turn-On delay time | td(on) | VDS=450V,ID=13A, VGS=10V,RG=25 (note4,5) | 40 | ns | ||
| Turn-On rise time | tr | 50.2 | ns | |||
| Turn-Off delay time | td(Off) | 234.6 | ns | |||
| Turn-Off rise time | tf | 67.2 | ns | |||
| Total Gate Charge | Qg | VDS=720V,ID=13A, VGS=10V,RG=25 (note4,5) | 66.64 | nC | ||
| Gate-Source charge | Qgs | 15.68 | nC | |||
| Gate-Drain charge | Qg | 25 | nC | |||
| Drain-Source Diode Forward Current | VSD | VGS=0V,IS=18A | 0.7 | V | ||
| Diode Forward Current | IS | 18 | A | |||
| Reverse recovery time | Trr | IS=13A,dI/dT=100A/S VR=100V,VGS=0V, Tj=150(note4) | 590 | nS | ||
| Reverse recovery charge | Qrr | 6702 | nC | |||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.212 | /W | |||
| Thermal Resistance,junction to Ambient | Rth(j-A) | 62.5 | /W |
2411261919_MASPOWER-MS18N100HGC0_C5139250.pdf
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