MOSFET transistor MASPOWER MSPN0308S0 offering low on resistance and N plus P channel for motor control
Key Attributes
Model Number:
MSPN0308S0
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
3.4A
RDS(on):
290mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
1.419nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.2nC@5V
Mfr. Part #:
MSPN0308S0
Package:
SOP-8
Product Description
Product Overview
The MSNP0308S0/N2 H1.01 Maspower is a high-performance MOSFET featuring N+P channel configuration with very low on-resistance. It is designed for applications such as motor control and synchronous rectification.
Product Attributes
- Brand: Maspower
Technical Specifications
| Parameter | Symbol | NMOS Value | PMOS Value | Unit | Notes |
| Absolute Ratings | |||||
| Drain-Source Voltage | VDSS | 80 | -80 | V | |
| Drain Current-continuous (TC=25) | ID | 3.4 | -2.6 | A | |
| Drain Current-continuous (TC=100) | ID | 1.7 | -1.3 | A | |
| Drain Current-pulse | IDM | 13.6 | -10.4 | A | (note 1) |
| Gate-Source Voltage | VGS | 20 | V | ||
| Avalanche Current, single pulse(L=0.5mH) | IAS | 5.4 | -4.2 | A | |
| Avalanche Energy, single pulse(L=0.5mH) | EAS | 7.29 | 4.41 | mJ | |
| Power Dissipation (SOP-8) | PD | 2.0 (TC=25), 1.4 (TC=100) | W | ||
| Power Dissipation (DFN5x6) | PD | 2.8 (TC=25), 1.1 (TC=100) | W | ||
| Maximum Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55 ~ 150 | |||
| N-Channel Electrical Characteristics | |||||
| Drain-Source Voltage | BVDSS | 80 | - | V | ID=250A,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | - | 1 (TC=25), 30 (TC=85) | A | VDS=80V,VGS=0V |
| Gate body leakage current | IGSS | 10 | A | VDS=0V,VGS=20V | |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | - | V | VDS=VGS,ID=250A |
| Static Drain-Source On-Resistance | RDS(ON) | 130 (VGS=10V,ID=3.4A) | - | m | TC=25 |
| Static Drain-Source On-Resistance | RDS(ON) | 134 (VGS=4.5V,ID=1.7A) | - | m | TC=25 |
| Input capacitance | Ciss | 1300 | pF | VDS=20V, VGS=0V, f=1.0MHz | |
| Output capacitance | Coss | 200 | pF | ||
| Reverse transfer capacitance | Crss | 40 | pF | ||
| Gate Resistance | RG | 2.5 | VDS=0V, VGS=0V, f=1.0MHZ | ||
| Forward Transfer Admittance | gfs | 3.0 | - | S | VDS = 10V, ID = 3.4A |
| N-Channel Switching Characteristics | |||||
| Turn-On delay time | td(on) | 7.8 | ns | VDD=20V, ID=1.7A, RL=20 RG=6 VGEN=10V | |
| Turn-On rise time | tr | 6.9 | ns | ||
| Turn-Off delay time | td(Off) | 22.4 | ns | ||
| Turn-Off rise time | tf | 4.8 | ns | ||
| Total Gate Charge | Qg | 6.6 | nC | VDS=40V,ID=3.4A, VGS=5V | |
| Gate-Source charge | Qgs | 1.8 | nC | ||
| Gate-Drain charge | Qg d | 2.2 | nC | ||
| N-Channel Drain-Source Diode Characteristics | |||||
| Diode Forward Voltage | VSD | 0.78 - 1.1 | V | VGS=0V,IS=1.7A | |
| Reverse Recovery Time | Trr | 13 | ns | Ids=1.7A, disd/dt=100A/us | |
| Reverse Recovery Charge | Qrr | 8.7 | nC | ||
| P-Channel Electrical Characteristics | |||||
| Drain-Source Voltage | BVDSS | - | -80 | V | ID=-250A,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | - | -1 (TC=25), -30 (TC=85) | A | VDS=-80V,VGS=0V |
| Gate body leakage current | IGSS | 100 | nA | VDS=0V,VGS=20V | |
| Gate Threshold Voltage | VGS(th) | - | -1.5 - -3 | V | VDS=VGS,ID=-250A |
| Static Drain-Source On-Resistance | RDS(ON) | - | 258 (VGS=-10V,ID=-2.6A) | m | TC=25 |
| Static Drain-Source On-Resistance | RDS(ON) | - | 290 (VGS=-4.5V,ID=-1.3A) | m | TC=25 |
| Input capacitance | Ciss | 1419 | pF | VDS=-25V, VGS=0V, f=1.0MHz | |
| Output capacitance | Coss | 230 | pF | ||
| Reverse transfer capacitance | Crss | 45 | pF | ||
| Gate Resistance | RG | 8 | Vgs=0V,Vds=0V F=1MHz | ||
| Forward Transfer Admittance | gfs | - | 2.0 | S | VDS=-10V,ID=-2.6A |
| P-Channel Switching Characteristics | |||||
| Turn-On delay time | td(on) | 8.7 | ns | VDD=-40V, IDS=-1.3A, RG=6 VGEN=-10V RL=20 | |
| Turn-On rise time | tr | 7 | ns | ||
| Turn-Off delay time | td(Off) | 31 | ns | ||
| Turn-Off rise time | tf | 17 | ns | ||
| Total Gate Charge | Qg | 8.2 | nC | VDS=-40V,ID=-2.6A, VGS=-5.0V | |
| Gate-Source charge | Qgs | 2.5 | nC | ||
| Gate-Drain charge | Qg d | 2.5 | nC | ||
| P-Channel Drain-Source Diode Characteristics | |||||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-1.3A | |
| Reverse Recovery time | Trr | 15 | ns | IS=-2.6A, disd/dt=100A/us | |
| Reverse Recovery Charge | Qrr | 8 | nC | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Ambient | Rth(J-A)2 | 62.5 (SOP8), 45 (DFN5x6) | /W | Mounted on a ceramic board (30300.8mm) | |
| Thermal Resistance, Junction to Ambient | Rth(J-A)3 | 89.2 (SOP8), 68.5 (DFN5x6) | /W | Mounted on a Cu board (40400.8mm) | |
2408021404_MASPOWER-MSPN0308S0_C37635856.pdf
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