MDD Microdiode Semiconductor MDD30N06D N Channel MOSFET with Enhanced Thermal Performance and Operation
Key Attributes
Model Number:
MDD30N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Pd - Power Dissipation:
37W
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.422nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
MDD30N06D
Package:
TO-252
Product Description
Product Overview
This N-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is ideal for power management in telecom and industrial automation, motor drives, uninterruptible power supplies, and current switching in DC/DC & AC/DC (SR) sub-systems.
Product Attributes
- Brand: MDD
- Certifications: RoHS Compliant
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Unit | Min | Typ | Max | Condition |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | V | 60 | |||
| Gate-Source Voltage | VGS | V | ±20 | |||
| Continuous Drain Current | ID | A | 30 | Note 1 | ||
| Single Pulsed Avalanche Energy | EAS | mJ | 37 | Note 3 | ||
| Power Dissipation | PD | W | TA=25°C | |||
| Thermal Resistance, steady-state | RθJA | °C/W | 27.6 | 37 | ||
| Junction Temperature | TJ | °C | -55 | +150 | ||
| Storage Temperature | Tstg | °C | -55 | +150 | ||
| Electrical Characteristics | ||||||
| Source-Drain Breakdown Voltage | V(BR)DSS | V | 60 | VGS=0V, ID=250μA | ||
| Gate-Source Leakage Current | IGSS | nA | ±100 | VDS=±20V | ||
| Drain-Source Leakage Current | IDSS | μA | 1 | VGS=0V, ID=250μA | ||
| Gate Threshold Voltage | VGS(TH) | V | 2.5 | 3.5 | ID=250μA | |
| Drain-Source On-State Resistance | RDS(ON) | mΩ | 31 | VGS=10V, ID=15A | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | ns | 6 | VDD=30V, ID=20A, RG=3Ω | ||
| Turn on Rise Time | tr | ns | 9 | VGS=10V | ||
| Turn Off Fall Time | tf | ns | 14 | |||
| Turn Off Delay Time | td(off) | ns | 26 | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | V | 0.8 | 1.2 | IS=20A, VGS=0V | |
| Body Diode Reverse Recovery Time | trr | ns | 23 | IF=20A, di/dt=100A/μs | ||
| Body Diode Reverse Recovery Charge | Qrr | nC | 5 | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | pF | 1422 | VDS=30V, VGS=0V, f=1MHz | ||
| Output Capacitance | Coss | pF | 28 | |||
| Reverse Transfer Capacitance | Crss | pF | 6 | |||
| Total Gate Charge | Qg | nC | 52 | VDS=30V, ID=20A, VGS=10V | ||
| Gate Source Charge | Qgs | nC | 6 | |||
| Gate Drain Charge | Qgd | nC | 2.5 | |||
2507221720_MDD-Microdiode-Semiconductor-MDD30N06D_C49383122.pdf
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