High Voltage MOSFET MASPOWER MS6N150HGE0 with Minimized Gate Charge and Low Intrinsic Capacitances
Key Attributes
Model Number:
MS6N150HGE0
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
6A
RDS(on):
4.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Input Capacitance(Ciss):
1.3nF
Pd - Power Dissipation:
160W
Output Capacitance(Coss):
120pF
Gate Charge(Qg):
85nC
Mfr. Part #:
MS6N150HGE0
Package:
TO-263
Product Description
Product Overview
The MS6N150HGC0/B2/E0 is a high-performance power MOSFET from Maspower, designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high speed switching, and very low on-resistance, making it ideal for welders, UPS systems, PV inverters, and general switching applications.
Product Attributes
- Brand: Maspower
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | Notes |
| Absolute Maximum Ratings | VDS | VGS = 0 | 1500 | V | Drain-source voltage | ||
| VGS | 30 | V | Gate-source voltage | ||||
| ID | TC = 25C | 6 | A | Drain current (continuous) | |||
| ID | TC = 100C | 4 | A | Drain current (continuous) | |||
| IDM | 24 | A | Drain current (pulsed) | ||||
| IAR | Repetitive or not-repetitive (pulse width limited by TJ max) | 5 | A | Avalanche current | |||
| Electrical Characteristics | V(BR)DSS | ID = 250A, VGS = 0 | 1500 | V | Drain-source breakdown voltage | ||
| IDSS | VDS = Max rating, TC=125 C | 10 | 500 | A | Zero gate voltage drain current | ||
| IGSS | VGS = 30 V | 100 | nA | Gate-body leakage current | |||
| VGS(th) | VDS = VGS, ID = 250 A | 3 | 4 | 5 | V | Gate threshold voltage | |
| RDS(on) | VGS = 10V, ID = 2A | 3.8 | 4.5 | Static drain-source on resistance | |||
| gfs | VDS = 15 V, ID = 2A | 3.5 | S | Forward trans-conductance | |||
| Capacitances | Ciss | VDS=25V,f=1MHz,VGS=0 | 1300 | pF | Input capacitance | ||
| Coss | VDS=25V,f=1MHz,VGS=0 | 120 | pF | Output capacitance | |||
| Crss | VDS=25V,f=1MHz,VGS=0 | 12 | pF | Reverse transfer capacitance | |||
| Switching Characteristics | td(on) | VDD = 750 V, ID =3 A, RG = 4.7 , VGS = 10 V | 50 | ns | Turn-on delay time | ||
| tr | VDD = 750 V, ID =3 A, RG = 4.7 , VGS = 10 V | 16 | ns | Rise time | |||
| td(off) | VDD = 750 V, ID =3 A, RG = 4.7 , VGS = 10 V | 100 | ns | Turn-off delay time | |||
| tf | VDD = 750 V, ID =3 A, RG = 4.7 , VGS = 10 V | 80 | ns | Fall time | |||
| Gate Charge | Qg | VDD=1200V,ID=6A,VGS=10V | 85 | nC | Total gate charge | ||
| Qgs | VDD=1200V,ID=6A,VGS=10V | 14 | nC | Gate-source charge | |||
| Qgd | VDD=1200V,ID=6A,VGS=10V | 48 | nC | Gate-drain charge | |||
| Source-Drain Diode | ISD | 6 | A | Source-drain current | |||
| ISD | Pulsed | 24 | A | Source-drain current (pulsed) | |||
| VSD | ISD= 6 A, VGS= 0 | - | 1.5 | 2.0 | V | Forward on voltage | |
| Reverse Recovery Characteristics | trr | ISD= 6A, di/dt=100A/s, VDD= 60 V, TJ=25C | 950 | ns | Reverse recovery time | ||
| Qrr | ISD= 6A, di/dt=100A/s, VDD= 60 V, TJ=25C | 9 | C | Reverse recovery charge | |||
| IRRM | ISD= 6A, di/dt=100A/s, VDD= 60 V, TJ=25C | 20 | A | Reverse recovery current | |||
| trr | IS=6A, di/dt=100A/s, VDD= 60V, TJ=150C | 900 | ns | Reverse recovery time | |||
| Thermal Data | Rthj-c | 0.78 | 2 | /W | Thermal resistance junction-case max (TO-247/TO-263, TO-3PH) | ||
| Rthj-a | 62.5 | 50 | /W | Thermal resistance junction-ambient max (TO-247, TO-3PH/TO-263) | |||
| PTOT | TC = 25C | 160 | 62.5 | W | Total dissipation (TO-247/TO-263, TO-3PH) |
2501151750_MASPOWER-MS6N150HGE0_C42445170.pdf
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