Low gate charge MOSFET MDD Microdiode Semiconductor MDD20N65F 650V N Channel enhancement mode device
Key Attributes
Model Number:
MDD20N65F
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.962nF@25V
Gate Charge(Qg):
58.3nC
Mfr. Part #:
MDD20N65F
Package:
TO-220F
Product Description
650V N-Channel Enhancement Mode MOSFET MDD20N65F/MDD20N65P
This 650V N-Channel Enhancement Mode MOSFET offers ultra-low gate charge, low reverse transfer capacitance, and fast switching capabilities. It is avalanche energy tested and features improved dv/dt capability for high ruggedness. Ideal for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridges, and LED power supplies.
General Features
- Ultra low gate charge
- Low reverse transfer Capacitance
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
Applications
- High efficiency switch mode power supplies
- Electronic lamp ballasts based on half bridge
- LED power supplies
Technical Specifications
| Parameter | Symbol | MDD20N65F/MDD20N65P | Unit |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage | VDS | 650 | V |
| Gate-Source Voltage | VGS | 30 | V |
| Continuous Drain Current (Tc=25) | ID | 20 | A |
| Power Dissipation (TO-220F) | PD | 45 | W |
| Power Dissipation (TO-220) | PD | 250 | W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 ~150 | |
| Pulsed Drain Current (Note 1) | IDM | 80 | A |
| Avalanche Energy Single Pulsed (Note 2) | EAS | 720 | mJ |
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 5 | V/ns |
| Continuous diode forward current | IS | 20 | A |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V(BR)DSS | 650 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(TH) | 2.0 ~ 4.0 | V |
| Drain-Source On-State Resistance (VGS=10V, ID=10A) | RDS(ON) | 0.5 | |
| Input Capacitance (VDS=25V, VGS=0V, f=1MHz) | Ciss | 2962 | pF |
| Output Capacitance | Coss | 266 | pF |
| Reverse Transfer Capacitance | Crss | 18 | pF |
| Total Gate Charge (VDS=520V, VGS=10V, ID=20A) | Qg | 58.3 | nC |
| Source drain current(Body Diode) | ISD | 20 | A |
| Drain-Source Diode Forward Voltage (IS=20A, VGS=0V) | VSD | 1.5 | V |
| Body Diode Reverse Recovery Time | trr | 492.8 | ns |
| Body Diode Reverse Recovery Charge | Qrr | 7.46 | uC |
| Thermal Characteristics | |||
| Thermal resistance, Junction-to-case (TO-220F) | RJC | 2.78 | C/W |
| Thermal resistance, Junction-to-case (TO-220) | RJC | 0.5 | C/W |
| Thermal resistance, Junction-to-ambient (TO-220F) | RJA | 62.5 | C/W |
| Thermal resistance, Junction-to-ambient (TO-220) | RJA | 40 | C/W |
Package Marking and Ordering Information
| Part Number | Marking | Package | Units/Tube | Units/Reel |
| MDD20N65F | 20N65F | TO-220F | 50 | - |
| MDD20N65P | 20N65P | TO-220-3L | 50 | - |
2511241510_MDD-Microdiode-Semiconductor-MDD20N65F_C5299409.pdf
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