N channel MOSFET MASPOWER MS140N30HGB3 offering high current rating and RoHS compliance for industrial
Key Attributes
Model Number:
MS140N30HGB3
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
140A
RDS(on):
27mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
55pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.04kW
Input Capacitance(Ciss):
14.8nF@25V
Gate Charge(Qg):
185nC@10V
Mfr. Part #:
MS140N30HGB3
Package:
TO-264
Product Description
Product Overview
The MS140N30HGB3/C0 H1.06 Maspower is a high-performance N-channel MOSFET designed for power switching applications. It features a VDS of 300V and an ID of 140A, with an ultra-low RDS(on) of less than 32m at VGS=10V due to its high-density cell design. This product offers low gate charge and improved dv/dt capability, making it suitable for isolated DC/DC converters in Telecom and Industrial sectors, as well as synchronous rectification in DC/DC converters. It is a RoHS-compliant product.
Product Attributes
- Brand: Maspower
- Model: MS140N30HGB3/C0 H1.06
- Certification: RoHS
- Package Options: TO-264 (MS140N30HGB3), TO-247 (MS140N30HGC0)
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units | TO-264 (Rth(j-C)) | TO-247 (Rth(j-C)) |
| Drain-Source Voltage | VDSS | ID=250A,VGS=0V | 300 | - | - | V | 0.12 | 0.4 |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V | - | - | 25 | A | 0.12 | 0.4 |
| Gate-Body Leakage Current | IGSS | VGS=20VVDS=0V | - | - | 200 | nA | 0.12 | 0.4 |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2.4 | 3.4 | 4.4 | V | 0.12 | 0.4 |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=30A | - | 27 | 32 | m | 0.12 | 0.4 |
| Forward Transconductance | gfs | VDS=20V,ID=70A | 50 | 90 | - | S | 0.12 | 0.4 |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 14.8 | - | nF | 0.12 | 0.4 |
| Output capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHZ | - | 1830 | - | pF | 0.12 | 0.4 |
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHZ | - | 55 | - | pF | 0.12 | 0.4 |
| Turn-On delay time | td(on) | VDS=150V,ID=70A, RG=1 VGS=10V | - | 30 | - | ns | 0.12 | 0.4 |
| Turn-On rise time | tr | VDS=150V,ID=70A, RG=1 VGS=10V | - | 30 | - | ns | 0.12 | 0.4 |
| Turn-Off delay time | td(Off) | VDS=150V,ID=70A, RG=1 VGS=10V | - | 100 | - | ns | 0.12 | 0.4 |
| Turn-Off rise time | tf | VDS=150V,ID=70A, RG=1 VGS=10V | - | 20 | - | ns | 0.12 | 0.4 |
| Total Gate Charge | Qg | VDS=150V,ID=70A, VGS=10V | - | 185 | - | nC | 0.12 | 0.4 |
| Gate-Source charge | Qgs | VDS=150V,ID=70A, VGS=10V | - | 72 | - | nC | 0.12 | 0.4 |
| Gate-Drain charge | Qg | VDS=150V,ID=70A, VGS=10V | - | 60 | - | nC | 0.12 | 0.4 |
| Drain-Source Diode Forward Current | IS | TC=25 | - | - | 140 | A | 0.12 | 0.4 |
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | - | 0.84 | 1.2 | V | 0.12 | 0.4 |
| Reverse recovery time | trr | IS=25A, dIs/dt=100A/s | - | - | 350 | ns | 0.12 | 0.4 |
| Reverse recovery charge | Qrr | IS=25A, dIs/dt=100A/s | - | 0.6 | - | C | 0.12 | 0.4 |
| Maximum Power Dissipation | PD | TC=25 | - | - | 1040 | W | 0.12 | 0.4 |
| Maximum Power Dissipation | PD | TC=100 | - | - | 415 | W | 0.12 | 0.4 |
| Maximum Power Dissipation | PD | TC=25 | - | - | 313 | W | 0.12 | 0.4 |
| Maximum Power Dissipation | PD | TC=100 | - | - | 125 | W | 0.12 | 0.4 |
| Operating and Storage Temperature Range | TJ,TSTG | - | -55 | - | +150 | 0.12 | 0.4 |
2411271633_MASPOWER-MS140N30HGB3_C5353701.pdf
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