Low on resistance MOSFET MASPOWER MS10N65HCT1 ideal for switched mode power supplies and UPS systems
Key Attributes
Model Number:
MS10N65HCT1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
650mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.77pF
Output Capacitance(Coss):
21.55pF
Input Capacitance(Ciss):
565pF
Pd - Power Dissipation:
27W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
MS10N65HCT1
Package:
TO-220F
Product Description
Product Overview
The MS10N65HCT1 is a high-performance N-channel MOSFET from Maspower, designed for efficient power management applications. It features ultra-low on-resistance (RDS(on)) of 0.55 and ultra-low gate charge (Qg) of 14nC, ensuring minimal power loss and fast switching speeds. This device is 100% UIS tested and RoHS compliant, making it suitable for demanding power factor correction (PFC), switched-mode power supplies (SMPS), and uninterruptible power supply (UPS) systems.
Product Attributes
- Brand: Maspower
- Model: MS10N65HCT1
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Drain Current -continuous | ID | TC=25 | 10 | A | ||
| Drain Current -continuous | ID | TC=100 | 6.0* | A | ||
| Drain Current - pulse (note 1) | IDM | 30 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (note 2) | EAS | 120 | mJ | |||
| Avalanche Current(note 1) | IAR | 10 | A | |||
| Repetitive Avalanche Current(note 1) | EAR | 27.7 | mJ | |||
| Power Dissipation | PD | 27 | W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Solding temperature,wave solding only allowed at leads.(1.6mm for 10s) | Tsold | 260 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 650 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 1 | uA |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=30V | - | - | 100 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=30V | - | -100 | - | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.5 | 3.13 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3.5A TJ=25 | - | 0.55 | 0.65 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3.5A TJ=150 | - | 1.378 | - | |
| Forward Transconductance | gfs | VDS=10V,ID=3.5A (note 4) | - | 0.7 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHz open drain | - | 6.03 | - | |
| Input capacitance | Ciss | VDS=100V, VGS=0V, F=1.0MHz | - | 565 | - | pF |
| Output capacitance | Coss | - | 21.55 | - | pF | |
| Reverse transfer capacitance | Crss | - | 0.77 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=3.5A, RG=10(note 4,5) | - | 36.8 | - | ns |
| Turn-On rise time | tr | - | 9.8 | - | ns | |
| Turn-Off delay time | td(off) | - | 27.9 | - | ns | |
| Turn-Off Fall time | tf | - | 15.6 | - | ns | |
| Total Gate Charge | Qg | VDS=520V,ID=3.5A, VGS=0 to 10V (note4,5) | - | 14 | - | nC |
| Gate-Source charge | Qgs | - | 2.9 | - | nC | |
| Gate-Drain charge | Qgd | - | 6.3 | - | nC | |
| Gate-plateau voltage | Vp | - | 5 | - | V | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 10 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 30 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=3.5A | - | - | 1.1 | V |
| Reverse recovery time | trr | VGS=0V,IS=3.5A dIF/dt=100A/us (note 4) VR=400V | - | 198.1 | - | ns |
| Reverse recovery charge | Qrr | - | 1123 | - | uC | |
| Peak reverse recovery current | IRRM | - | 12.74 | - | A | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | Rth(J-C) | 4.6 | /W | |||
| Thermal Resistance, Junction-to-Ambient,minimal Footprint | Rth(J-A) | 62 | /W | |||
2501151750_MASPOWER-MS10N65HCT1_C42445161.pdf
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