MDD Microdiode Semiconductor MDD4N60F 600V N Channel Enhancement Mode MOSFET for Power Applications
Key Attributes
Model Number:
MDD4N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
RDS(on):
2Ω@10V
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
580pF
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
12.8nC@10V
Mfr. Part #:
MDD4N60F
Package:
TO-220F-3L
Product Description
Product Overview
The MDD4N60F is a 600V N-Channel Enhancement Mode MOSFET designed for various power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched-mode power supplies, and LED drivers.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 4 | A | ||
| Power Dissipation | PD | TO-220F | 32 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~150 | |||
| Pulsed Drain Current | IDM | (Note 1) | 16 | A | ||
| Avalanche Energy Single Pulsed | EAS | (Note 2) | 245 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | (Note 3) | 5 | V/ns | ||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-to-case | RJC | TO-220F | 3.8 | C/W | ||
| Thermal resistance, Junction-to-ambient | RJA | TO-220F | 62.5 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 600 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | 1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | 2.4 | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHz | 580 | pF | ||
| Output Capacitance | Coss | 50 | pF | |||
| Reverse Transfer Capacitance | Crss | 3 | pF | |||
| Total Gate Charge | Qg | VDS=480V, VGS=10V, ID=4A (Note1,2) | 12.8 | nC | ||
| Gate Source Charge | Qgs | 3.1 | nC | |||
| Gate Drain Charge | Qgd | 5.5 | nC | |||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=300V, ID=4A, RG=10 (Note1,2) | 13 | ns | ||
| Turn on Rise Time | tr | 31 | ns | |||
| Turn Off Delay Time | td(off) | 38 | ns | |||
| Turn Off Fall Time | tf | 17 | ns | |||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | 1.5 | V | ||
| Body Diode Reverse Recovery Time | trr | VR=400V IF=4A, -diF/dt =100A/s | 275 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | 1.43 | uC | |||
2507221720_MDD-Microdiode-Semiconductor-MDD4N60F_C49382974.pdf
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