Power MOSFET ME55N06A N Channel 75 Volt Drain Source Voltage for Small Outline Surface Mount Devices
Key Attributes
Model Number:
ME55N06A
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
64A
RDS(on):
9.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
194pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.563nF@15V
Pd - Power Dissipation:
63W
Gate Charge(Qg):
114nC@10V
Mfr. Part #:
ME55N06A
Package:
TO-252
Product Description
Product Overview
The ME55N06A is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. Its low in-line power loss is well-suited for very small outline surface mount packages.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME55N06A), Green product-Halogen free (ME55N06A-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| N-Channel 75-V (D-S) MOSFET | ME55N06A / ME55N06A-G | |||
| Drain-Source Voltage | VDS | 75 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current | ID | 64 | A | TC=25 |
| Continuous Drain Current | ID | 51 | A | TC=70 |
| Pulsed Drain Current | IDM | 256 | A | |
| Maximum Power Dissipation | PD | 63 | W | TC=25 |
| Maximum Power Dissipation | PD | 40 | W | TC=70 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Case* | RJC | 2 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage | BVDSS | 75 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 2 - 4 | V | VDS=VGS, ID=250A |
| Gate-Body Leakage | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=75V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 7.5 - 9.5 | mΩ | VGS=10V, ID=25A |
| Diode Forward Voltage | VSD | 0.85 - 1.2 | V | IS=25A, VGS=0V |
| Total Gate Charge | Qg | 114 | nC | VDS=44V, VGS=10V, ID=25A |
| Total Gate Charge | Qg | 26 | nC | VDS=44V, VGS=4.5V, ID=25A |
| Gate-Source Charge | Qgs | 34 | nC | |
| Gate-Drain Charge | Qgd | 33 | nC | |
| Input Capacitance | Ciss | 1563 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 363 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 194 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 51.4 | ns | VDD=28V, RL=28Ω, VGS =10V, RG=4.5Ω |
| Turn-On Rise Time | tr | 19.3 | ns | VDD=28V, RL=28Ω, VGS =10V, RG=4.5Ω |
| Turn-Off Delay Time | td(off) | 104 | ns | VDD=28V, RL=28Ω, VGS =10V, RG=4.5Ω |
| Turn-Off Fall Time | tf | 19.9 | ns | VDD=28V, RL=28Ω, VGS =10V, RG=4.5Ω |
2410121657_MATSUKI-ME55N06A_C3647155.pdf
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