P Channel DMOS trench technology transistor MATSUKI ME45P04 for battery powered circuit applications
Key Attributes
Model Number:
ME45P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
2.76nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
ME45P04
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME45P04-G is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced design significantly minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits where low in-line power loss is critical within a compact surface mount package.
Product Attributes
- Brand: Matsuki Electric/ Force Mos
- Product Variants: ME45P04 (Pb-free), ME45P04-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings (TC=25 Unless Otherwise Noted) | ||||
| Drain-Source Voltage | VDS | -40 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (TC=25) | ID | -30 | A | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Continuous Drain Current (TC=70) | ID | -23 | A | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Pulsed Drain Current | IDM | -120 | A | |
| Maximum Power Dissipation (TC=25) | PD | 25 | W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Maximum Power Dissipation (TC=70) | PD | 16 | W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Case | RJC | 5 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Static Electrical Characteristics (TC =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-250A |
| Gate Threshold Voltage | VGS(th) | -1.5 to -3 | V | VDS=VGS, ID=-250A |
| Gate Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-40V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 15 to 18 | m | VGS=-10V, ID= -12A |
| Drain-Source On-State Resistance | RDS(ON) | 18 to 25 | m | VGS=-4.5V, ID= -6A |
| Diode Forward Voltage | VSD | -0.78 to -1.2 | V | IS=-1.7A, VGS=0V |
| Dynamic Electrical Characteristics (TJ =25 Noted) | ||||
| Total Gate Charge | Qg | 25 | nC | VDS=-20V, VGS=-4.5V, ID=-12A |
| Gate-Source Charge | Qgs | 11 | nC | VDS=-20V, VGS=-4.5V, ID=-12A |
| Gate-Drain Charge | Qgd | 9.5 | nC | VDS=-20V, VGS=-4.5V, ID=-12A |
| Input capacitance | Ciss | 2760 | pF | VDS=-20V, VGS=0V, F=1MHz |
| Output Capacitance | Coss | 260 | pF | VDS=-20V, VGS=0V, F=1MHz |
| Reverse Transfer Capacitance | Crss | 85 | pF | VDS=-20V, VGS=0V, F=1MHz |
| Turn-On Delay Time | td(on) | 48 | ns | VDD=-15V, RL =15 ID=-1A, VGEN=-10V, RG=6 |
| Turn-On Rise Time | tr | 24 | ns | VDD=-15V, RL =15 ID=-1A, VGEN=-10V, RG=6 |
| Turn-Off Delay Time | td(off) | 88 | ns | VDD=-15V, RL =15 ID=-1A, VGEN=-10V, RG=6 |
| Turn-Off Fall Time | tf | 34 | ns | VDD=-15V, RL =15 ID=-1A, VGEN=-10V, RG=6 |
2410121643_MATSUKI-ME45P04_C165229.pdf
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