Low gate charge N channel MOSFET Megain MGB032N04L suitable for battery powered systems and DC DC converters
Key Attributes
Model Number:
MGB032N04L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
3.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF
Input Capacitance(Ciss):
1.587nF
Pd - Power Dissipation:
62.5W
Output Capacitance(Coss):
491pF
Gate Charge(Qg):
24.9nC@10V
Mfr. Part #:
MGB032N04L
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The MGB032N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low gate charge and fast switching speeds. It is 100% EAS guaranteed and available as a Green Device. This MOSFET is ideal for synchronous rectification in DC-DC converters, battery-powered systems, and backlighting applications.
Product Attributes
- Brand: MEGAIN
- Product Code: MGB032N04L
- Package: PDFN 3x3
- Quantity: 3000 / Tape & Reel
- Marking: MGB032N04L
- Certifications: Green Device Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Drain-Source On-state Resistance | VGS=10V, ID=20A | - | 3.2 | 3.9 | m |
| VGS=4.5V, ID=20A | - | 4.6 | 6.0 | m | |
| VGS=10V, ID=20A | - | 3.2 | 3.9 | m | |
| Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | - | - | V |
| Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.3 | V |
| Drain-Source Leakage Current | VDS=32V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| Total Gate Charge | VDS=20V, VGS=10V, ID=20A | - | 24.9 | - | nC |
| Input Capacitance | VDS=20V, VGS=0V, F=1MHz | - | 1587 | - | pF |
| Output Capacitance | VDS=20V, VGS=0V, F=1MHz | - | 491 | - | pF |
| Reverse Transfer Capacitance | VDS=20V, VGS=0V, F=1MHz | - | 61 | - | pF |
| Diode Forward Voltage | VGS=0V, IS=1A, TJ=25 | - | - | 1 | V |
| Drain-Source Voltage | - | - | - | 40 | V |
| Gate-Source Voltage | - | - | - | 20 | V |
| Drain Current Continuous (TC=25) | - | - | - | 50 | A |
| Drain Current Continuous (TC=100) | - | - | - | 39 | A |
| Pulsed Drain Current | - | - | - | 200 | A |
| Single Pulse Avalanche Energy | - | - | 48 | - | mJ |
| Avalanche Current | - | - | 31 | - | A |
| Total Power Dissipation (TC=25C) | - | - | - | 62.5 | W |
| Storage Temperature Range | - | -55 | - | 150 | |
| Operating Junction Temperature Range | - | -55 | - | 150 | |
| Thermal Resistance Junction to Ambient | - | - | - | 55 | /W |
| Thermal Resistance Junction to Case | - | - | - | 2 | /W |
2506251635_Megain-MGB032N04L_C49242746.pdf
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