High voltage 650V 100A IGBT luxin-semi YGW100N65FSA1 designed for welding converters inverters and power supplies
Key Attributes
Model Number:
YGW100N65FSA1
Product Custom Attributes
Pd - Power Dissipation:
500W
Td(off):
129ns
Td(on):
46ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
28pF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@250uA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
255nC
Reverse Recovery Time(trr):
125ns
Switching Energy(Eoff):
3.5mJ
Turn-On Energy (Eon):
5.4mJ
Input Capacitance(Cies):
4.78nF
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
264pF
Mfr. Part #:
YGW100N65FSA1
Package:
TO-247
Product Description
Product Overview
The YGW100N65FSA1 is a 650V, 100A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, Trench-Stop technology for enhanced ruggedness and temperature stability, a short circuit withstand time of 5s, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is ideal for use in Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-Semi
- Model: YGW100N65FSA1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| Maximum Ratings | VCE | 650 | V | - | |
| IC | 200 / 100 | A | DC collector current, limited by Tjmax TC = 25C / TC = 100C | ||
| IF | 150 / 75 | A | Diode Forward current, limited by Tjmax TC = 25C / TC = 100C | ||
| VGE | 20 / 30 | V | Continuous / Transient Gate-emitter voltage | ||
| ICM | 300 | A | Pulsed Collector Current, VGE =15V, tp limited by Tjmax | ||
| Thermal Resistance | R(j-c) | 0.32 | K/W | IGBT thermal resistance, junction - case | |
| R(j-c) | 0.8 | K/W | Diode thermal resistance, junction - case | ||
| R(j-a) | 40 | K/W | Thermal resistance, junction - ambient | ||
| Electrical Characteristics (IGBT) | BVCES | 650 | V | VGE=0V , IC=250A | |
| VGE(th) | 4.3 / 5.3 / 6.2 | V | VGE=VCE, IC=250A | ||
| VCE(sat) | 1.95 / 2.46 | V | VGE=15V, IC=100A Tj = 25C / Tj = 175C | ||
| ICES | 250 / 2500 | A | VCE = 1200V, VGE = 0V Tj = 25C / Tj = 150C | ||
| IGES | - | 100 | nA | VCE = 0V, VGE = 20V | |
| gfs | - | 40 | S | VCE=20V, IC=15A | |
| Dynamic Characteristics (IGBT) | Cies | - | 4780 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Coes | - | 264 | pF | - | |
| Cres | - | 28 | pF | - | |
| Qg | - | 255 | nC | VCC = 520V, IC = 100A, VGE = 15V | |
| Switching Characteristics (Inductive Load) | td(on) | 46 / 42 | ns | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | |
| tr | 154 / 200 | ns | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | ||
| td(off) | 129 / 152 | ns | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | ||
| tf | 130 / 196 | ns | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | ||
| Eon | 5.4 / 7.2 | mJ | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | ||
| Eoff | 3.5 / 5.5 | mJ | Tj=25C / Tj=175C , VCC = 400V, IC = 100A, VGE = 0/15V, Rg=10 | ||
| ICSC | - | 500 | A | VGE=15V,tSC5us VCC=400V, Tjstart=25C | |
| Tsc | 5 | s | VGE= 15V, VCE 600V ,Tj=25 | ||
| Electrical Characteristics (DIODE) | VFM | 2.0 / 1.8 | V | IF = 100A Tj=25 / Tj=175 | |
| Trr | 125 / 201 | ns | Tj=25 / Tj=175 IF= 100A, VR = 400V, di/dt =400A/s | ||
| Irr | 19.2 / 42.5 | A | Tj=25 / Tj=175 IF= 100A, VR = 400V, di/dt =400A/s | ||
| Qrr | 1.14 / 5.0 | uC | Tj=25 / Tj=175 IF= 100A, VR = 400V, di/dt =400A/s |
2410121321_luxin-semi-YGW100N65FSA1_C17702405.pdf
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