High voltage 650V 40A IGBT luxin-semi YGW40N65F1A1 with enhanced avalanche capability and low VCEsat
Key Attributes
Model Number:
YGW40N65F1A1
Product Custom Attributes
Td(off):
120ns
Pd - Power Dissipation:
188W
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
40pF
Input Capacitance(Cies):
2.1nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
90nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
100pF
Reverse Recovery Time(trr):
85ns
Switching Energy(Eoff):
400uJ
Turn-On Energy (Eon):
2mJ
Mfr. Part #:
YGW40N65F1A1
Package:
TO-247
Product Description
Product Overview
The YGW40N65F1A1 is a 650V, 40A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, Trench-Stop Technology for enhanced ruggedness and temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device also offers enhanced avalanche capability.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW40N65F1A1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 |
| DC collector current | IC | 40 | A | TC = 100C |
| Diode Forward current | IF | 40 | A | TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+150 | C | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.0 / 4.9 / 5.6 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.60 | V | VGE=15V, IC=40A, Tj = 25C / Tj = 175C |
| Zero gate voltage collector current | ICES | 0.1 / 4000 | A | VCE = 650V, VGE = 0V, Tj = 25C / Tj = 175C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2100 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 100 | pF | |
| Reverse transfer capacitance | Cres | 40 | pF | |
| Gate charge | QG | 90 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20, Tj=25C |
| Rise Time | tr | 80 | ns | |
| Turn-off Delay Time | td(off) | 120 | ns | |
| Fall Time | tf | 75 | ns | |
| Turn-on Energy | Eon | 2.0 | mJ | |
| Turn-off Energy | Eoff | 0.4 | mJ | |
| Diode Forward Voltage | VFM | 1.8 / 2.4 | V | IF = 40A, Tj= 25 |
| Reverse Recovery Time | Trr | 85 | ns | IF= 40A, VR = 400V, di/dt= 500A/s, Tj= 25 |
| Reverse Recovery Current | Irr | 12 | A | |
| Reverse Recovery Charge | Qrr | 550 | nC |
Applications
- Uninterruptible Power Supplies
- Inverter
- Welding Converters
- PFC applications
- Converter with high switching frequency
2410121307_luxin-semi-YGW40N65F1A1_C4153735.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
