power electronics component Megain MGW40N120N 1200V N Channel Silicon Carbide MOSFET for switching applications
Key Attributes
Model Number:
MGW40N120N
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
57A
Operating Temperature -:
-55℃~+175℃
RDS(on):
52mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.456nF
Pd - Power Dissipation:
255W
Output Capacitance(Coss):
96pF
Gate Charge(Qg):
115nC
Mfr. Part #:
MGW40N120N
Package:
TO-247-3
Product Description
Product Overview
The MGW40N120N is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance power electronics applications. It features an optimized package with a separate driver source pin, offering high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast, robust intrinsic body diode. This MOSFET is easy to parallel, making it suitable for demanding applications such as Switch Mode Power Supplies, DC/DC converters, Solar Inverters, Battery Chargers, and Motor Drives.
Product Attributes
- Brand: Mega
- Origin: Not specified
- Material: Silicon Carbide
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Test Conditions | Value | Units |
| Product Summary | |||
| VDS | 1200 | V | |
| ID | 57 | A | |
| RDS(ON) (at VGS = 18V) | <46 (Typ: 35) | m | |
| RDS(ON) (at VGS = 15V) | <52 (Typ: 40) | m | |
| Absolute Maximum Ratings | |||
| VDS | VGS = 0 V, ID = 100A | 1200 | V |
| ID (Continuous) | VGS = 18 V, TC = 25 | 57 | A |
| IDM (Pulsed) | 190 | A | |
| PD (Total Power Dissipation) | Tc = 25 | 255 | W |
| VGS (Recommend Gate Source Voltage) | -5/+18 | V | |
| VGS (Maximum Gate Source Voltage) | -10/+25 | V | |
| TSTG (Storage Temperature Range) | -55 to 175 | ||
| TJ (Operating Junction Temperature Range) | -55 to 175 | ||
| TL (Soldering Temperature) | 260 | ||
| Thermal Characteristics | |||
| RJC (Thermal Resistance Junction to Case) | 0.41 | /W | |
| Electrical Characteristics | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 100A | 1200 | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 1200V, VGS = 0V | 1 | A |
| IGSS (Gate-Source Leakage Current) | VGS = 18V | 1 | nA |
| VGS(th) (Gate Threshold Voltage) | VGS = VDS, ID = 10mA | 1.6 - 3.6 | V |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 18V, ID = 40A | 35 - 46 | m |
| RDS(ON) (Drain-Source On-state Resistance) | VGS = 15V, ID = 40A | 40 - 52 | m |
| Ciss (Input Capacitance) | VGS = 0V, VDS = 800V, f = 1MHz, VAC = 25mV | 1456 | pF |
| Coss (Output Capacitance) | 96 | pF | |
| Crss (Reverse Transfer Capacitance) | 9 | pF | |
| Eoss (Stored Energy) | 36 | J | |
| Qg (Total Gate Charge) | VDS = 800V, VGS = -5/+18V, ID = 40A | 115 | nC |
| Qgs (Gate-Source Charge) | 15 | nC | |
| Qgd (Gate-Drain Charge) | 57 | nC | |
| RG(int) (Internal Gate Resistance) | f = 1MHz, VAC = 25mV | 1.8 | |
| td(ON) (Turn-on Delay Time) | VDS = 800V, VGS = -5/+18V, RG = 2.5, ID = 40A | 13 | nS |
| tr (Turn-on Rise Time) | 19 | nS | |
| td(OFF) (Turn-off Delay Time) | 39 | nS | |
| tf (Turn-off Fall Time) | 7 | nS | |
| EON (Turn-on Switching Energy) | VDS = 800V, VGS = -5/+18V, RG = 2.5, ID = 40A | 222 | J |
| EOFF (Turn-off Switching Energy) | 126 | J | |
| Body Diode Characteristics | |||
| IS (Continuous Source Current) | 57 | A | |
| VSD (Diode Forward Voltage) | VGS = 0V, IS = 20A | 3.8 | V |
| trr (Reverse Recovery Time) | IS = 20A, VDS = 800V, VGS = -5V, di/dt = 2000A/s | 22 | nS |
| Qrr (Reverse Recovery Charge) | 335 | nC | |
| Irrm (Peak Reverse Recovery Current) | 25 | A | |
2506251635_Megain-MGW40N120N_C49242764.pdf
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