MOSFET MagnaChip Semicon MDES08N019RH single N channel trench MOSFET for motor drive applications
Key Attributes
Model Number:
MDES08N019RH
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
180A
RDS(on):
1.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
40pF
Input Capacitance(Ciss):
12.025nF
Pd - Power Dissipation:
300W
Output Capacitance(Coss):
2.634nF
Gate Charge(Qg):
172nC@10V
Mfr. Part #:
MDES08N019RH
Package:
D2PAK-7L
Product Description
Product Overview
The MDES08N019RH is a single N-channel Trench MOSFET from Magnachip Semiconductor Ltd., utilizing advanced MV MOSFET Technology. It offers high performance with excellent on-state resistance and fast switching capabilities. This MOSFET is suitable for motor drive and general-purpose applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Certifications: RoHS, Halogen Free
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
| Absolute Maximum Ratings | VDSS | 80 | V | (TJ = 25oC) | |||
| VGSS | 20 | V | (TJ = 25oC) | ||||
| ID (Silicon Limited, TC=25oC) | 280 | A | |||||
| ID (Package Limited, TC=25oC) | 180 | A | |||||
| ID (Silicon Limited, TC=100oC) | 198 | A | |||||
| IDM (Pulsed Drain Current) | 720 | A | (2) | ||||
| PD (TC=25oC) | 300 | W | |||||
| PD (TC=100oC) | 150 | W | |||||
| EAS (Single Pulse Avalanche Energy) | 613 | mJ | (3) | ||||
| Thermal Characteristics | RthJA (Junction-to-Ambient) | 60 | oC/W | (1) | |||
| RthJC (Junction-to-Case) | 0.5 | oC/W | |||||
| TJ, Tstg (Junction and Storage Temperature Range) | -55~175 | oC | |||||
| Electrical Characteristics | BVDSS (Drain-Source Breakdown Voltage) | 80 | V | VGS = 0V, ID = 250A | 80 | - | - |
| VGS(th) (Gate Threshold Voltage) | V | VDS = VGS, ID = 250A | 2.4 | 3.8 | - | ||
| IDSS (Drain Cut-Off Current) | A | VDS = 80V, VGS = 0V | - | - | 1 | ||
| IGSS (Gate Leakage Current) | nA | VGS = 20V, VDS = 0V | - | - | 100 | ||
| RDS(ON) (Drain-Source ON Resistance) | m | VGS = 10V, ID = 100A | - | 1.6 | 1.9 | ||
| RDS(ON) (Drain-Source ON Resistance) | m | VGS = 6.0V, ID = 50A | - | 2.0 | 3.3 | ||
| gfs (Forward Trans-conductance) | S | VDS = 10V, ID = 100A | - | 130 | - | ||
| Qg (Total Gate Charge) | nC | VDS = 40V, VGS = 10V, ID = 100A | - | 172 | - | ||
| Qgs (Gate-Source Charge) | nC | - | 50 | - | |||
| Qgd (Gate-Drain Charge) | nC | - | 42 | - | |||
| Ciss (Input Capacitance) | pF | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 12025 | - | ||
| Coss (Output Capacitance) | pF | - | 2634 | - | |||
| Crss (Reverse Transfer Capacitance) | pF | - | 40 | - | |||
| Dynamic Characteristics | td(on) (Turn-On Delay Time) | ns | VDS = 40V, VGS = 10V, ID = 100A , RG = 3.0 | - | 36 | - | |
| tr (Rise Time) | ns | - | 26 | - | |||
| td(off) (Turn-Off Delay Time) | ns | - | 119 | - | |||
| tf (Fall Time) | ns | - | 66 | - | |||
| Rg (Gate Resistance) | f= 1 MHz | - | 3.2 | - | |||
| Drain-Source Body Diode Characteristics | VSD (Source-Drain Diode Forward Voltage) | V | VGS = 0V, IS = 100A | - | 1.0 | 1.2 | |
| trr (Body Diode Reverse Recovery Time) | ns | IF = 100A, dl/dt = 100A/s | - | 134 | - | ||
| Qrr (Body Diode Reverse Recovery Charge) | nC | - | 482 | - |
2509121506_MagnaChip-Semicon-MDES08N019RH_C51891826.pdf
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