Low voltage N Channel MOSFET MATSUKI ME2620 suitable for power management in battery powered circuits
Key Attributes
Model Number:
ME2620
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
756mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
276pF
Number:
1 N-channel
Input Capacitance(Ciss):
583pF
Pd - Power Dissipation:
2.2W
Gate Charge(Qg):
14.3nC@10V
Mfr. Part #:
ME2620
Package:
SOT-223-3
Product Description
Product Overview
The ME2620-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device ideal for low-voltage applications such as cellular phones, notebook computer power management, and other battery-powered circuits. It offers low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: ME (implied from product code)
- Product Code: ME2620-G
- Type: N-Channel MOSFET
- Package: SOT-223
- Certifications: Green product-Halogen free
Technical Specifications
| Parameter | Symbol | Maximum Ratings | Unit | Electrical Characteristics | Symbol | Limit | Unit | Typical Characteristics | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 200 | V | Drain-Source Breakdown Voltage | BVDSS | 200 | V | Input Capacitance | Ciss | 583 | pF |
| Gate-Source Voltage | VGS | ±20 | V | Gate Threshold Voltage | VGS(th) | 2 - 4 | V | Output Capacitance | Coss | 27 | pF |
| Continuous Drain Current (TA=25) | ID | 1.4 | A | Gate Leakage Current | IGSS | ±100 | nA | Reverse Transfer Capacitance | Crss | 6 | pF |
| Continuous Drain Current (TA=70) | ID | 1.1 | A | Zero Gate Voltage Drain Current | IDSS | 1 | µA | Total Gate Charge | Qg | 14.3 | nC |
| Pulsed Drain Current | IDM | 5 | A | Drain-Source On-Resistance | RDS(ON) | 630 - 756 | mΩ | Gate-Source Charge | Qgs | 4.3 | nC |
| Maximum Power Dissipation (TA=25) | PD | 2.2 | W | Diode Forward Voltage | VSD | 1.2 | V | Gate-Drain Charge | Qgd | 5 | nC |
| Maximum Power Dissipation (TA=70) | PD | 1.4 | W | Turn-On Delay Time | td(on) | 6.2 | ns | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | Turn-On Rise Time | tr | 21.4 | ns | |||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 57 | /W | Turn-Off Delay Time | td(off) | 19.5 | ns | ||||
| Turn-Off Fall Time | tf | 27.3 | ns |
2410121518_MATSUKI-ME2620_C3647150.pdf
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