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quality N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current factory
quality N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current factory
quality N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current factory
quality N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current factory

N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current

Key Attributes
Model Number: MMIS90R1K4PTH
Product Custom Attributes
Mfr. Part #:
MMIS90R1K4PTH
Package:
TO-251
Product Description

Product Overview

The MMIS90R1K4P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This device provides designers with the advantage of low EMI and reduced switching losses, making it suitable for applications requiring high efficiency and low power loss.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Material: N-channel MOSFET
  • Certifications: RoHS Compliant
  • Package: TO-251
  • Packing: PE Tube

Technical Specifications

ParameterSymbolValueUnitTest ConditionNote
Drain source breakdown voltageV(BR)DSS900VVGS = 0V, ID = 0.25mA
Gate threshold voltageVGS(th)2 - 4VVDS = VGS, ID = 0.25mATyp: 3
Zero gate voltage drain currentIDSS-1uAVDS = 900V, VGS = 0VMax
Gate leakage currentIGSS-100nAVGS = 30V, VDS = 0VMax
Drain-source on state resistanceRDS(ON)1.26 - 1.49VGS = 10V, ID = 2.5ATyp: 1.26, Max: 1.49
Continuous drain currentID5.0ATC = 25oCMax
Continuous drain currentID3.0ATC = 100oCMax
Pulsed drain currentIDM15A(1)
Power dissipationPD83W
Single-pulse avalanche energyEAS68mJ
MOSFET dv/dt ruggednessdv/dt50V/ns
Diode dv/dt ruggednessdv/dt15V/ns(2)
Storage temperatureTstg-55 ~ 150oC
Maximum operating junction temperatureTj150oC
Thermal resistance, junction-case maxRthjc1.5oC/WMax
Thermal resistance, junction-ambient maxRthja62.5oC/WMax
Continuous diode forward currentIS-5AMax
Diode forward voltageVSD-1.4VIS = 5A, VGS = 0VMax
Reverse recovery timetrr-486nsIS = 5A di/dt = 100A/us, VDD = 100VTyp
Reverse recovery chargeQrr-2.5uCTyp
Reverse recovery currentIrrm-10.2ATyp
Input capacitanceCiss-474pFVDS = 25V, VGS = 0V, f = 1.0MHzTyp
Output capacitanceCoss-438pFVDS = 25V, VGS = 0V, f = 1.0MHzTyp
Reverse transfer capacitanceCrss-14pFVDS = 25V, VGS = 0V, f = 1.0MHzTyp
Effective output capacitance energy relatedCo(er)-15-VDS = 0V to 720V, VGS = 0V, f = 1.0MHz(3)
Turn on delay timetd(on)-14nsVGS = 10V, RG = 25, VDS = 450V, ID = 5ATyp
Rise timetr-23nsVGS = 10V, RG = 25, VDS = 450V, ID = 5ATyp
Turn off delay timetd(off)-44nsVGS = 10V, RG = 25, VDS = 450V, ID = 5ATyp
Fall timetf-21nsVGS = 10V, RG = 25, VDS = 450V, ID = 5ATyp
Total gate chargeQg-13.6nCVGS = 10V, VDS = 720V, ID = 5ATyp
Gate source chargeQgs-3.4nCVGS = 10V, VDS = 720V, ID = 5ATyp
Gate drain charge Qgd-5.8nCVGS = 10V, VDS = 720V, ID = 5ATyp
Gate resistanceRG-2.3VGS = 0V, f = 1.0MHzTyp

2510211530_MagnaChip-Semicon-MMIS90R1K4PTH_C51902204.pdf

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