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quality N Channel Logic Enhancement Mode MOSFET MATSUKI ME08N20 with Excellent On Resistance Characteristics factory
quality N Channel Logic Enhancement Mode MOSFET MATSUKI ME08N20 with Excellent On Resistance Characteristics factory

N Channel Logic Enhancement Mode MOSFET MATSUKI ME08N20 with Excellent On Resistance Characteristics

Key Attributes
Model Number: ME08N20
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-
RDS(on):
400mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Input Capacitance(Ciss):
2.61nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
51.7nC@10V
Mfr. Part #:
ME08N20
Package:
TO-252-3
Product Description

Product Overview

The ME08N20 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making the device highly suitable for low-voltage applications such as LCD inverters, computer power management, and DC-to-DC converter circuits that require low in-line power loss. Key features include an RDS(ON) of 0.4 at VGS=10V, a super high density cell design for extremely low RDS(ON), and exceptional on-resistance and maximum DC current capability.

Product Attributes

  • Brand: Matsuki Electric/ Force Mos
  • Product Line: ME08N20/ME08N20-G
  • Certifications: Pb-free (ME08N20), Green product-Halogen free (ME08N20-G)
  • Package Type: TO-252-3L

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TC=25 9 A
Continuous Drain Current ID TC=70 7.2 A
Pulsed Drain Current IDM 36 A
Maximum Power Dissipation PD TC=25 74.9 W
Maximum Power Dissipation PD TC=70 47.9 W
Operating Junction Temperature TJ -55 150
Thermal Resistance-Junction to Case RJC * 1.67 /W
Electrical Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 200 V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 4 V
Gate Leakage Current IGSS VDS=0V, VGS=20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=200V, VGS=0V 1 A
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A 0.35 0.40
Diode Forward Voltage VSD IS=9A, VGS=0V 1.5 V
Dynamic Characteristics
Total Gate Charge Qg VDD=160V, VGS=10V, ID=9A 51.7 nC
Gate-Source Charge Qgs 12.7
Gate-Drain Charge Qgd 16.3
Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz 2610 pF
Output Capacitance Coss 68
Reverse Transfer Capacitance Crss 21
Turn-On Delay Time td(on) VDS=160V, VGS=10V, RG=4.7, RL=17.7 26.9 ns
Turn-On Rise Time tr 37.2
Turn-Off Delay Time td(off) 63.5
Turn-Off Fall Time tf 43.8

2410121657_MATSUKI-ME08N20_C2841371.pdf

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