power switching MOSFET MagnaChip Semicon MMFT65R090RTH with halogen free Pb free plating and tube packing
Key Attributes
Model Number:
MMFT65R090RTH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
35A
RDS(on):
79mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Input Capacitance(Ciss):
2.857nF
Pd - Power Dissipation:
38.9W
Output Capacitance(Coss):
71pF
Gate Charge(Qg):
78.9nC@10V
Mfr. Part #:
MMFT65R090RTH
Package:
TO-220FT
Product Description
Product Overview
The MMFT65R090R is a power MOSFET utilizing Magnachip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This device provides advantages such as low EMI, low switching loss, and excellent ESD capability, making it suitable for demanding applications.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Package: TO-220FT
- Packing: Tube
- RoHS Status: Compliant
- Certifications: Green package Pb free plating, halogen free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain Source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 1mA |
| Gate threshold voltage | VGS(th) | 3.0 | V | VDS = VGS, ID = 250A |
| Zero gate voltage drain current | IDSS | 1.0 | A | VDS = 650V, VGS = 0V |
| Gate leakage current | IGSS | 100 | nA | VGS = 30V, VDS = 0V |
| Drain-Source on state resistance | RDS(ON) | 0.090 | VGS = 10V, ID = 17.5A | |
| Input capacitance | Ciss | 2857 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Output capacitance | Coss | 71 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Reverse transfer capacitance | Crss | 9.6 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Effective output capacitance energy related | Co(er) | 122 | pF | VDS = 0V to 520V, VGS = 0V, f = 400kHz |
| Turn on delay time | td(on) | 44 | ns | VGS=10V, RG=25 VDD=325V, ID=35A |
| Rise time | tr | 84 | ns | VGS=10V, RG=25 VDD=325V, ID=35A |
| Turn off delay time | td(off) | 252 | ns | VGS=10V, RG=25 VDD=325V, ID=35A |
| Fall time | tf | 61 | ns | VGS=10V, RG=25 VDD=325V, ID=35A |
| Total gate charge | Qg | 78.9 | nC | VGS=10V, VDD=520V, ID=35A |
| Gate Source charge | Qgs | 12.7 | nC | VGS=10V, VDD=520V, ID=35A |
| Gate Drain charge | Qgd | 34.2 | nC | VGS=10V, VDD=520V, ID=35A |
| Gate resistance | RG | 5.4 | VGS = 0V, f = 1.0MHz | |
| Continuous Diode Forward Current | ISD | 35 | A | |
| Diode forward voltage | VSD | 1.4 | V | ISD = 35A, VGS = 0V |
| Reverse recovery time | trr | 573 | ns | ISD = 35A di/dt = 100A/s VDD = 100V |
| Reverse recovery charge | Qrr | 12 | C | ISD = 35A di/dt = 100A/s VDD = 100V |
| Reverse recovery current | Irrm | 41.9 | A | ISD = 35A di/dt = 100A/s VDD = 100V |
| Thermal resistance, junction-case max | RthJC | 3.21 | /W | |
| Thermal resistance, junction-ambient max | RthJA | 73.7 | /W | |
| Drain Source voltage | VDSS | 650 | V | |
| Gate Source voltage | VGSS | 30 | V | |
| Continuous drain current | ID | 35 | A | TC=25 |
| Continuous drain current | ID | 22 | A | TC=100 |
| Pulsed drain current | IDM | 105 | A | |
| Power dissipation | PD | 38.9 | W | |
| Single-pulse avalanche energy | EAS | 900 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Continuous diode forward current | dv/dt | 35 | A | |
| Diode dv/dt ruggedness | dv/dt | 50 | V/ns | |
| Storage temperature | Tstg | -55 ~150 | ||
| Maximum operating junction temperature | Tj | 150 |
2509121533_MagnaChip-Semicon-MMFT65R090RTH_C51902192.pdf
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