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quality power MOSFET MagnaChip Semicon MMFT65R195PTH with super junction technology and low switching losses factory
quality power MOSFET MagnaChip Semicon MMFT65R195PTH with super junction technology and low switching losses factory

power MOSFET MagnaChip Semicon MMFT65R195PTH with super junction technology and low switching losses

Key Attributes
Model Number: MMFT65R195PTH
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
175mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Output Capacitance(Coss):
1.425nF
Input Capacitance(Ciss):
1.86nF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MMFT65R195PTH
Package:
TO-220FT
Product Description

Product Overview

The MMFT65R195P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides designers with the advantage of low EMI and reduced switching losses, making it suitable for various power applications.

Product Attributes

  • Brand: Magnachip Semiconductor Ltd.
  • Package: TO-220FT
  • Packing: Tube
  • Certifications: Halogen Free

Technical Specifications

ParameterSymbolRatingUnitTest Condition
Drain Source voltageVDSS650V
Gate Source voltageVGSS±30V
Continuous drain currentID20ATC=25°C
Continuous drain currentID12.7ATC=100°C
Pulsed drain currentIDM60A(1)
Power dissipationPD34W
Single - pulse avalanche energyEAS485mJ
MOSFET dv/dt ruggednessdv/dt50V/ns
Diode dv/dt ruggednessdv/dt15V/ns
Storage temperatureTstg-55 ~150°C
Maximum operating junction temperatureTj150°C
Thermal resistance, junction-case maxRthjc3.7°C/W
Thermal resistance, junction-ambient maxRthja62.5°C/W
Drain Source Breakdown voltageV(BR)DSS650VVGS = 0V, ID=0.25mA
Gate Threshold VoltageVGS(th)2 / 3 / 4VVDS = VGS, ID=0.25mA
Zero Gate Voltage Drain CurrentIDSS-1μAVDS = 650V, VGS = 0V
Gate Leakage CurrentIGSS-100nAVGS = ±30V, VDS =0V
Drain-Source On State ResistanceRDS(ON)0.175 / 0.195ΩVGS = 10V, ID = 7.3 A
Input CapacitanceCiss1860pFVDS = 25V, VGS = 0V, f = 1.0MHz
Output CapacitanceCoss1425pFVDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceCrss76pFVDS = 25V, VGS = 0V, f = 1.0MHz
Effective Output Capacitance Energy RelatedCo(er)39-VDS = 0V to 520V, VGS = 0V,f = 1.0MHz
Turn On Delay Timetd(on)40nsVGS = 10V, RG = 25Ω, VDS = 325V, ID = 20 A
Rise Timetr75nsVGS = 10V, RG = 25Ω, VDS = 325V, ID = 20 A
Turn Off Delay Timetd(off)172nsVGS = 10V, RG = 25Ω, VDS = 325V, ID = 20 A
Fall Timetf54nsVGS = 10V, RG = 25Ω, VDS = 325V, ID = 20 A
Total Gate ChargeQg53nCVGS = 10V, VDS =520V, ID = 20 A
Gate Source ChargeQgs13nCVGS = 10V, VDS =520V, ID = 20 A
Gate Drain ChargeQgd20nCVGS = 10V, VDS =520V, ID = 20 A
Gate ResistanceRG3.0ΩVGS = 0V, f = 1.0MHz
Continuous Diode Forward CurrentISD20A
Diode Forward VoltageVSD1.4VISD = 20 A, VGS = 0 V
Reverse Recovery Timetrr524nsISD = 20 A, di/dt = 100 A/μs, VDD = 100 V
Reverse Recovery ChargeQrr9.4μCISD = 20 A, di/dt = 100 A/μs, VDD = 100 V
Reverse Recovery CurrentIrrm35.7AISD = 20 A, di/dt = 100 A/μs, VDD = 100 V

Applications

  • PFC Power Supply Stages
  • Switching Applications
  • Adapter
  • Motor Control
  • DC DC Converters

2509121533_MagnaChip-Semicon-MMFT65R195PTH_C51902190.pdf

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