MATSUKI ME95N03T Power MOSFET Featuring N Channel DMOS Trench Technology for Power Management Applications
Key Attributes
Model Number:
ME95N03T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
88A
Operating Temperature -:
-55℃~+175℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
127pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.56nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
ME95N03T
Package:
TO-220
Product Description
Product Overview
The ME95N03T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced design minimizes on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is suitable for power management in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: ME (Matsuki Electric/Force mos)
- Origin: DCC (Official Release)
- Certifications: Pb-free (ME95N03T), Green product-Halogen free (ME95N03T-G)
Technical Specifications
| Parameter | Symbol | Rating Unit | Min | Typ | Max | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | V | 30 | |||
| Gate-Source Voltage | VGSS | V | ±20 | |||
| Continuous Drain Current* TC=25 | ID | A | 88 | Package limitation current is 80A. | ||
| Continuous Drain Current* TC=70 | ID | A | 74 | |||
| Pulsed Drain Current | IDM | A | 352 | |||
| Maximum Power Dissipation TC=25 | PD | W | 75 | |||
| Maximum Power Dissipation TC=70 | PD | W | 53 | |||
| Operating Junction Temperature | TJ | -55 | 175 | |||
| Thermal Resistance-Junction to Case** | RJC | /W | 2 | The device mounted on 1in2 FR4 board with 2 oz copper. | ||
| Static Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | V | 30 | VGS=0V, ID=250µA | ||
| Gate Threshold Voltage | VGS(th) | V | 1 | 3 | VDS=VGS, ID=250µA | |
| Gate-Body Leakage | IGSS | nA | ±100 | VDS=0V, VGS=±20V | ||
| Zero Gate Voltage Drain Current | IDSS | µA | 1 | VDS=30, VGS=0V | ||
| Drain-Source On-Resistance* VGS=10V, ID=50A | RDS(ON) | mΩ | 5 | 6 | ||
| Drain-Source On-Resistance* VGS=4.5V, ID=35A | RDS(ON) | mΩ | 7 | 9 | ||
| Diode Forward Voltage* ISD=35A, VGS=0V | VSD | V | 0.9 | 1.2 | ||
| Dynamic Electrical Characteristics | ||||||
| Total Gate Charge | Qg | nC | 59 | VDD=15V, VGS=10V, ID=35A | ||
| Total Gate Charge | Qg | nC | 31 | VDD=15V, VGS=4.5V, ID=35A | ||
| Gate-Source Charge | Qgs | 10 | ||||
| Gate-Drain Charge | Qgd | 14 | ||||
| Gate Resistance | Rg | Ω | 1.7 | VDS=0V, VGS=0V, f=1MHz | ||
| Input Capacitance | Ciss | pF | 2560 | VDS=25V, VGS=0V, f=1MHz | ||
| Output Capacitance | Coss | pF | 388 | |||
| Reverse Transfer Capacitance | Crss | pF | 127 | |||
| Turn-On Delay Time | td(on) | ns | 45 | VDD=15V, ID=35A, VGS =4.5V, RG=6.2Ω | ||
| Turn-On Rise Time | tr | ns | 45 | |||
| Turn-Off Delay Time | td(off) | ns | 68 | |||
| Turn-Off Fall Time | tf | ns | 34 | |||
2410121457_MATSUKI-ME95N03T_C709730.pdf
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