P Channel DMOS trench technology transistor MATSUKI ME2301 designed for power management solutions
Key Attributes
Model Number:
ME2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V,2.0A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
-
Mfr. Part #:
ME2301
Package:
SOT-23
Product Description
Product Overview
The ME2301 is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Not explicitly stated, but implied to be related to the model number prefix.
- Origin: Not explicitly stated.
- Material: Not explicitly stated.
- Color: Not applicable.
- Certifications: Pb-free (ME2301), Green product-Halogen free (ME2301-G).
Technical Specifications
| Parameter | Symbol | Maximum Ratings (TA=25 Unless Otherwise Noted) | Unit | Electrical Characteristics (TA=25 Unless Otherwise Specified) | Unit | |
|---|---|---|---|---|---|---|
| Static Characteristics | VDS | -20 | V | V(BR)DSS (VGS=0V, ID=-250A) | -20 | V |
| VGS | 8 | V | VGS(th) (VDS=VGS, ID=-250A) | -0.4 | -1 | V |
| ID (TA=25) | -2.7 | A | IGSS (VDS=0V, VGS=8V) | 100 | nA | |
| ID (TA=70) | -2.1 | A | IDSS (VDS=-20V, VGS=0V) | -1 | A | |
| IDM | -11 | A | RDS(ON) (VGS=-4.5V, ID=-2.8A) | 90 | 110 | m |
| PD (TA=25) | 1.3 | W | RDS(ON) (VGS=-2.5V, ID=-2.0A) | 110 | 150 | m |
| PD (TA=70) | 0.8 | W | VSD (IS=-1A, VGS=0V) | -0.7 | -1.4 | V |
| Dynamic Characteristics | TJ | -55 to 150 | Qg (VDS=-6V, VGS=-4.5V, ID=-2.8A) | 5.8 | nC | |
| RJA | 100 | /W | Qgs | 1.7 | nC | |
| Qgd | 1.2 | nC | ||||
| Ciss (VDS=-15V, VGS=0V, f=1.0MHz) | 510 | pF | ||||
| Coss | 53 | pF | ||||
| Crss | 17 | pF | ||||
| Switching Characteristics | td(on) (VDS=-6V, RL =6 RGEN=6, VGS=-4.5V) | 53 | ns | |||
| tr | 32 | ns | ||||
| td(off) | 47 | ns | ||||
| tf | 7 | ns |
2410121457_MATSUKI-ME2301_C165217.pdf
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