MATSUKI ME2333 G P Channel Power Transistor Designed for Low Voltage High Side Switching Applications
Key Attributes
Model Number:
ME2333-G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
56mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
126pF
Number:
-
Output Capacitance(Coss):
141pF
Input Capacitance(Ciss):
882pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
17.5nC@4.5V
Mfr. Part #:
ME2333-G
Package:
SOT-23
Product Description
Product Overview
The ME2333 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Line: ME2333/ME2333-G
- Certifications: Pb-free, Green product-Halogen
- Origin: DCC
Technical Specifications
| Parameter | Symbol | Unit | ME2333/ME2333-G |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | V | -20 |
| Gate-Source Voltage | VGS | V | ±12 |
| Continuous Drain Current (TA=25) | ID | A | -4.9 |
| Continuous Drain Current (TA=70) | ID | A | -3.9 |
| Pulsed Drain Current | IDM | A | -19 |
| Maximum Power Dissipation (TA=25) | PD | W | 1.3 |
| Maximum Power Dissipation (TA=70) | PD | W | 0.8 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance-Junction to Ambient* | RJA | /W | 90 |
| Static Characteristics | |||
| Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | V(BR)DSS | V | -20 |
| Gate Threshold Voltage (VDS=VGS, ID=-250A) | VGS(th) | V | -0.3 to -0.9 |
| Gate Leakage Current (VDS=0V, VGS=±12V) | IGSS | nA | ±100 |
| Zero Gate Voltage Drain Current (VDS=-20V, VGS=0V) | IDSS | μA | -1 |
| Drain-Source On-Resistance (VGS=-4.5V, ID=-8A) | RDS(ON) | mΩ | 28 to 35 |
| Drain-Source On-Resistance (VGS=-2.5V, ID=-5A) | RDS(ON) | mΩ | 34 to 43 |
| Drain-Source On-Resistance (VGS=-1.8V, ID=-2A) | RDS(ON) | mΩ | 41 to 56 |
| Diode Forward Voltage (IS=-1A, VGS=0V) | VSD | V | -0.62 to -1 |
| Dynamic Characteristics | |||
| Total Gate Charge (VDS=-10V, VGS=-4.5V, ID=-8A) | Qg | nC | 17.5 |
| Gate-Source Charge | Qgs | nC | 4.9 |
| Gate-Drain Charge | Qgd | nC | 3 |
| Input Capacitance (VDS=-10V, VGS=0V,f=1MHz) | Ciss | pF | 882 |
| Output Capacitance (VDS=-10V, VGS=0V,f=1MHz) | Coss | pF | 141 |
| Reverse Transfer Capacitance (VDS=-10V, VGS=0V,f=1MHz) | Crss | pF | 126 |
| Turn-On Delay Time (VDS=-10V, RL =10Ω, RGEN=3Ω, VGS=-4.5V) | td(on) | ns | 95.9 |
| Turn-On Rise Time | tr | ns | 29.8 |
| Turn-Off Delay Time (VDS=-10V, RL =10Ω, RGEN=3Ω, VGS=-4.5V) | td(off) | ns | 122 |
| Turn-Off Fall Time | tf | ns | 32.5 |
2410121657_MATSUKI-ME2333-G_C2693565.pdf
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