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quality High speed switching MICROCHIP 1N914 diode with glass body and qualified MIL PRF 19500 certification factory
quality High speed switching MICROCHIP 1N914 diode with glass body and qualified MIL PRF 19500 certification factory

High speed switching MICROCHIP 1N914 diode with glass body and qualified MIL PRF 19500 certification

Key Attributes
Model Number: 1N914
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@75V
Non-Repetitive Peak Forward Surge Current:
2A
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - DC Reverse (Vr) (Max):
75V
Voltage - Forward(Vf@If):
1.2V@50mA
Current - Rectified:
200mA
Mfr. Part #:
1N914
Package:
DO-35
Product Description

Product Overview

The 1N914 is a JEDEC registered glass axial switching diode featuring internal metallurgical bonded construction for military-grade products. This small, low-capacitance diode offers very fast switching speeds and is hermetically sealed in a double-plug DO-35 package. It is suitable for a wide range of high-speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, and low-capacitance steering diodes. An RoHS compliant version is available for commercial grades.

Product Attributes

  • Brand: Microsemi Corporation
  • Origin: USA (implied by address)
  • Material: Glass, Metallurgical bond, Tin/lead plated or matte-tin terminals
  • Certifications: Qualified per MIL-PRF-19500/116 (JAN, JANTX, JANTXV levels available)
  • Compliance: RoHS compliant version available (commercial grade only)
  • Package: DO-35 (DO-204AH), also available in DO-213AA (surface mount)

Technical Specifications

ParameterSymbolValueUnitConditions
Junction and Storage TemperatureTJ & TSTG-65 to +175°C
Thermal Resistance Junction-to-LeadRθJL250°C/W(1)
Thermal Resistance Junction-to-AmbientRθJA325°C/W(2)
Maximum Breakdown VoltageV(BR)100V
Working Peak Reverse VoltageVRWM75V
Average Rectified CurrentIO200mA@ TA = 75 °C (3)
Non-Repetitive Sinusoidal Surge CurrentIFSM2A (pk)(tp = 8.3 ms)
Forward VoltageVF10.8V@ IF=10 mA
Forward VoltageVF21.2V@ IF=50 mA
Reverse Recovery Timetrr5ns(Note 1)
Forward Recovery Timetfr20ns(Note 2)
Reverse CurrentIR125nA@ 20 V
Reverse CurrentIR20.5µA@ 75 V
Reverse CurrentIR335µA@ 20 V, TA=150°C
Reverse CurrentIR475µA@ 75 V, TA=150°C
CapacitanceC4.0pF(Note 3)
CapacitanceC2.8pF(Note 4)

2410121620_MICROCHIP-1N914_C5444762.pdf

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